Citation: K. Okimura et N. Maeda, DISSOCIATION PROCESSES IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2-FILMS USING TETRAETHOXYSILANE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3157-3163
Authors:
VINOGRADOV GK
MENAGARISHVILI VM
YONEYAMA S
Citation: Gk. Vinogradov et al., CHARACTERIZATION OF A NOVEL LAMBDA BALANCED INDUCTIVE PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3164-3169
Authors:
NODA H
NAGAI H
SHIMAKURA M
HIRAMATSU M
NAWATA M
Citation: H. Noda et al., SYNTHESIS OF DIAMOND USING A LOW-PRESSURE, RADIO-FREQUENCY, INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3170-3174
Authors:
BOGART KHA
RAMIREZ SK
GONZALES LA
BOGART GR
FISHER ER
Citation: Kha. Bogart et al., DEPOSITION OF SIO2-FILMS FROM NOVEL ALKOXYSILANE O-2 PLASMAS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3175-3184
Authors:
ASAKURA Y
CHATTOPADHYAY KK
MATSUMOTO S
HIRAKURI K
Citation: Y. Asakura et al., DIAMOND SYNTHESIS IN CAPACITIVELY COUPLED 13.56 MHZ RADIO-FREQUENCY PLASMA USING PARALLEL-PLATE ELECTRODES WITH THE ADDITION OF DIRECT-CURRENT POWER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3185-3189
Authors:
SOBRINHO ASD
LATRECHE M
CZEREMUSZKIN G
KLEMBERGSAPIEHA JE
WERTHEIMER MR
Citation: Asd. Sobrinho et al., TRANSPARENT BARRIER COATINGS ON POLYETHYLENE TEREPHTHALATE BY SINGLE-FREQUENCY AND DUAL-FREQUENCY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3190-3198
Citation: Dc. Marra et al., SILICON HYDRIDE COMPOSITION OF PLASMA-DEPOSITED HYDROGENATED AMORPHOUS AND NANOCRYSTALLINE SILICON FILMS AND SURFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3199-3210
Authors:
ALONSO JC
VAZQUEZ R
ORTIZ A
PANKOV V
ANDRADE E
Citation: Jc. Alonso et al., EFFECT OF HYDROGEN DILUTION ON THE REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF CHLORINATED SIO2-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3211-3217
Citation: R. Platz et S. Wagner, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF INTRINSIC MICROCRYSTALLINE SILICON FROM CHLORINE-CONTAINING SOURCE GAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3218-3222
Citation: C. Basa et al., EFFECTS OF ION PRETREATMENTS ON THE NUCLEATION OF SILICON ON SILICON DIOXIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3223-3226
Citation: A. Bergeron et al., STRUCTURE OF THE INTERFACIAL REGION BETWEEN POLYCARBONATE AND PLASMA-DEPOSITED SIN1.3 AND SIO2 OPTICAL COATINGS STUDIED BY ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3227-3234
Citation: Jr. Woodworth et al., POSITIVE-ION SPECIES IN HIGH-DENSITY DISCHARGES CONTAINING CHLORINE AND BORON-TRICHLORIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3235-3239
Citation: Pa. Miller et al., OPTICAL SELF-ABSORPTION TECHNIQUE FOR QUALITATIVE MEASUREMENT OF EXCITED-STATE DENSITIES IN PLASMA REACTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3240-3246
Authors:
VYVODA MA
LEE H
MALYSHEV MV
KLEMENS FP
CERULLO M
DONNELLY VM
GRAVES DB
KORNBLIT A
LEE JTC
Citation: Ma. Vyvoda et al., EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3247-3258
Citation: Hl. Nigg et Ri. Masel, SURFACE-REACTION MECHANISMS OF TRIFLUORACETYLACETONE ON CLEAN AND PRE-OXIDIZED NI(110) - AN EXAMPLE WHERE ETCHING CHEMISTRY DOES NOT FOLLOWVOLATILITY TRENDS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3259-3265
Citation: Jy. Choe et al., LASER-INDUCED THERMAL-DESORPTION ANALYSIS OF THE SURFACE DURING GE ETCHING IN A CL-2 INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3266-3273
Citation: Rj. Hoekstra et Mj. Kushner, COMPARISON OF 2-DIMENSIONAL AND 3-DIMENSIONAL MODELS FOR PROFILE SIMULATION OF POLY-SI ETCHING OF FINITE-LENGTH TRENCHES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3274-3280
Authors:
SCHAEPKENS M
OEHRLEIN GS
HEDLUND C
JONSSON LB
BLOM HO
Citation: M. Schaepkens et al., SELECTIVE SIO2-TO-SI3N4 ETCHING IN INDUCTIVELY-COUPLED FLUOROCARBON PLASMAS - ANGULAR-DEPENDENCE OF SIO2 AND SI3N4 ETCHING RATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3281-3286
Authors:
SUEDA M
KOBAYASHI T
ROKKAKU T
OGAWA M
WATANABE T
MORIMOTO S
Citation: M. Sueda et al., HIGH-RATE DEPOSITION OF CBN FILMS BY ION-BEAM-ASSISTED VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3287-3294
Authors:
DISHNER MH
IVEY MM
GORER S
HEMMINGER JC
FEHER FJ
Citation: Mh. Dishner et al., PREPARATION OF GOLD THIN-FILMS BY EPITAXIAL-GROWTH ON MICA AND THE EFFECT OF FLAME ANNEALING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3295-3300
Citation: J. Musil et F. Regent, FORMATION OF NANOCRYSTALLINE NICR-N FILMS BY REACTIVE DC MAGNETRON SPUTTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3301-3304
Authors:
ARAIZA JJ
CARDENAS M
FALCONY C
MENDEZGARCIA VH
LOPEZ M
CONTRERASPUENTE G
Citation: Jj. Araiza et al., STRUCTURAL, OPTICAL AND ELECTRICAL CHARACTERISTICS OF YTTRIUM-OXIDE FILMS DEPOSITED BY LASER-ABLATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3305-3310
Authors:
CHOI WK
CHOI SC
JUNG HJ
KOH SK
BYUN DJ
KUM DW
Citation: Wk. Choi et al., SURFACE MODIFICATION OF ALPHA-AL2O3(0001) BY N-2(+) ION IRRADIATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3311-3313
Citation: Pj. Stout, MODELING SURFACE KINETICS AND MORPHOLOGY DURING 3C, 2H, 4H, AND 6H-SIC(111) STEP-FLOW GROWTH, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3314-3327
Citation: Kh. Junker et Jm. White, THERMAL AND ELECTRON DRIVEN CHEMISTRY OF CCL4 ON OXIDIZED SI(100), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3328-3334