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Results:
1-8
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Results: 8
Authors:
Stringfellow, GB
Citation: Gb. Stringfellow, Materials issues in high-brightness light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 1-45
Authors:
Craford, MG
Citation: Mg. Craford, Overview of device issues in high-brightness light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 47-63
Authors:
Steranka, FM
Citation: Fm. Steranka, AlGaAs red light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 65-96
Authors:
Chen, CH
Stockman, SA
Peanasky, MJ
Kuo, CP
Citation: Ch. Chen et al., OMVPE growth of AlGaInP for high-efficiency visible light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 97-148
Authors:
Kish, FA
Fletcher, RM
Citation: Fa. Kish et Rm. Fletcher, AlCaInP light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 149
Authors:
Hodapp, MW
Citation: Mw. Hodapp, Applications for high-brightness light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 227-356
Organometallic vapor-phase epitaxy of gallium nitride for high-brightness blue light-emitting diodes
Authors:
Akasaki, I
Amano, H
Citation: I. Akasaki et H. Amano, Organometallic vapor-phase epitaxy of gallium nitride for high-brightness blue light-emitting diodes, SEM SEMIMET, 48, 1997, pp. 357
Authors:
Nakamura, S
Citation: S. Nakamura, Group III-V nitride-based ultraviolet blue-green-yellow light-emitting diodes and laser diodes, SEM SEMIMET, 48, 1997, pp. 391-443
Risultati:
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