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Results:
1-9
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Results: 9
Authors:
Sasaki, N
Tsukada, M
Citation: N. Sasaki et M. Tsukada, Theory of scanning probe microscopy, ADV MATERIA, 2000, pp. 1-41
Authors:
Ohno, T
Citation: T. Ohno, The theoretical basis of scanning tunneling microscopy for semiconductors - First-principles electronic structure theory for semiconductor surfaces, ADV MATERIA, 2000, pp. 43-64
Authors:
Li, L
Sakurai, T
Citation: L. Li et T. Sakurai, Atomic Structure of 6H-SiC (0001) and (000(1)over-bar), ADV MATERIA, 2000, pp. 65-90
Authors:
Hashizume, T
Heike, S
Hitosugi, T
Kitazawa, K
Citation: T. Hashizume et al., Application of atom manipulation for fabricating nanoscale and atomic-scale structures on Si surfaces, ADV MATERIA, 2000, pp. 91-112
Authors:
Ohno, K
Kawazoe, Y
Citation: K. Ohno et Y. Kawazoe, Theoretical insights into fullerenes adsorbed on surfaces: Comparison withSTM studies, ADV MATERIA, 2000, pp. 113-142
Authors:
Sakai, A
Citation: A. Sakai, Apparent barrier height and barrier-height imaging of surfaces, ADV MATERIA, 2000, pp. 143-165
Authors:
Hasegawa, Y
Jia, JF
Sakurai, T
Li, ZQ
Ohno, K
Kawazoe, Y
Citation: Y. Hasegawa et al., Mesoscopic work function measurement by scanning tunneling microscopy, ADV MATERIA, 2000, pp. 167-191
Authors:
Xue, QK
Hashizume, T
Sakurai, T
Citation: Qk. Xue et al., Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces, ADV MATERIA, 2000, pp. 193-282
Authors:
Hashizume, T
Sakurai, T
Citation: T. Hashizume et T. Sakurai, Adsorption of fullerenes on semiconductor and metal surfaces investigated by field-ion scanning tunneling microscopy, ADV MATERIA, 2000, pp. 283-338
Risultati:
1-9
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