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Results:
1-8
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Results: 8
Authors:
BRUNETBRUNEAU A
SOUCHE D
FISSON S
VAN VN
VUYE G
ABELES F
RIVORY J
Citation: A. Brunetbruneau et al., MICROSTRUCTURAL CHARACTERIZATION OF ION-ASSISTED SIO2 THIN-FILMS BY VISIBLE AND INFRARED ELLIPSOMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2281-2286
Authors:
SOUCHE D
BRUNETBRUNEAU A
FISSON S
VAN VN
VUYE G
ABELES F
RIVORY J
Citation: D. Souche et al., VISIBLE AND INFRARED ELLIPSOMETRY STUDY OF ION-ASSISTED SIO2-FILMS, Thin solid films, 313, 1998, pp. 676-681
Authors:
VAN VN
BRUNETBRUNEAU A
FISSON S
FRIGERIO JM
VUYE G
WANG Y
ABELES F
RIVORY J
BERGER M
CHATON P
Citation: Vn. Van et al., DETERMINATION OF REFRACTIVE-INDEX PROFILES BY A COMBINATION OF VISIBLE AND INFRARED ELLIPSOMETRY MEASUREMENTS, Applied optics, 35(28), 1996, pp. 5540-5544
Authors:
BRUNETBRUNEAU A
VUYE G
FRIGERIO JM
ABELES F
RIVORY J
BERGER M
CHATON P
Citation: A. Brunetbruneau et al., INFRARED ELLIPSOMETRY INVESTIGATION OF SIOXNY THIN-FILMS ON SILICON, Applied optics, 35(25), 1996, pp. 4998-5004
Authors:
VAN VN
FISSON S
FRIGERIO JM
RIVORY J
VUYE G
WANG Y
ABELES F
Citation: Vn. Van et al., GROWTH OF LOW AND HIGH REFRACTIVE-INDEX DIELECTRIC LAYERS AS STUDIED BY IN-SITU ELLIPSOMETRY, Thin solid films, 253(1-2), 1994, pp. 257-261
Authors:
ABELES F
Citation: F. Abeles, FAREWELL NOTE, Optics communications, 108(1-3), 1994, pp. 210000001-210000001
Authors:
VUYE G
FISSON S
VAN VN
WANG Y
RIVORY J
ABELES F
Citation: G. Vuye et al., TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION OF SILICON USING IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 233(1-2), 1993, pp. 166-170
Authors:
RIVORY J
FISSON S
VAN VN
VUYE G
WANG Y
ABELES F
YUZHANG K
Citation: J. Rivory et al., STUDY OF CAF2 GROWTH ON SI, A-SIO2 BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 233(1-2), 1993, pp. 260-263
Risultati:
1-8
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