Authors: SHUL RJ HOWARD AJ PEARTON SJ ABEMATHY CR VARTULI CB BARNES PA BOZACK MJ

Citation: Rj. Shul et al., HIGH-RATE ELECTRON-CYCLOTRON-RESONANCE ETCHING OF GAN, INN, AND AIN, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2016-2021