AAAAAA

   
Results: 1-25 |
Results: 25
EASY-TO-USE SURFACE PASSIVATION TECHNIQUE FOR BULK CARRIER LIFETIME MEASUREMENTS ON SILICON-WAFERS
Authors: SCHMIDT J ABERLE AG
Citation: J. Schmidt et Ag. Aberle, EASY-TO-USE SURFACE PASSIVATION TECHNIQUE FOR BULK CARRIER LIFETIME MEASUREMENTS ON SILICON-WAFERS, Progress in photovoltaics, 6(4), 1998, pp. 259-263
OPTIMIZATION AND CHARACTERIZATION OF REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FOR THE PASSIVATION OF P-TYPE CRYSTALLINE SILICON SURFACES
Authors: LAUINGER T MOSCHNER J ABERLE AG HEZEL R
Citation: T. Lauinger et al., OPTIMIZATION AND CHARACTERIZATION OF REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FOR THE PASSIVATION OF P-TYPE CRYSTALLINE SILICON SURFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 530-543
IMPROVED UNDERSTANDING OF THERMALLY ACTIVATED STRUCTURAL-CHANGES IN AL SIOX/P-SI TUNNEL-DIODES BY MEANS OF INFRARED-SPECTROSCOPY/
Authors: BIERHALS A ABERLE AG HEZEL R
Citation: A. Bierhals et al., IMPROVED UNDERSTANDING OF THERMALLY ACTIVATED STRUCTURAL-CHANGES IN AL SIOX/P-SI TUNNEL-DIODES BY MEANS OF INFRARED-SPECTROSCOPY/, Journal of applied physics, 83(3), 1998, pp. 1371-1378
INJECTION LEVEL DEPENDENCE OF THE DEFECT-RELATED CARRIER LIFETIME IN LIGHT-DEGRADED BORON-DOPED CZOCHRALSKI SILICON
Authors: SCHMIDT J BERGE C ABERLE AG
Citation: J. Schmidt et al., INJECTION LEVEL DEPENDENCE OF THE DEFECT-RELATED CARRIER LIFETIME IN LIGHT-DEGRADED BORON-DOPED CZOCHRALSKI SILICON, Applied physics letters, 73(15), 1998, pp. 2167-2169
PROGRESS IN LOW-TEMPERATURE SURFACE PASSIVATION OF SILICON SOLAR-CELLS USING REMOTE-PLASMA SILICON-NITRIDE
Authors: ABERLE AG HEZEL R
Citation: Ag. Aberle et R. Hezel, PROGRESS IN LOW-TEMPERATURE SURFACE PASSIVATION OF SILICON SOLAR-CELLS USING REMOTE-PLASMA SILICON-NITRIDE, Progress in photovoltaics, 5(1), 1997, pp. 29-50
A SIMPLE FABRICATION PROCESS FOR 20-PERCENT EFFICIENT SILICON SOLAR-CELLS
Authors: HUBNER A HAMPE C ABERLE AG
Citation: A. Hubner et al., A SIMPLE FABRICATION PROCESS FOR 20-PERCENT EFFICIENT SILICON SOLAR-CELLS, Solar energy materials and solar cells, 46(1), 1997, pp. 67-77
ASSESSMENT AND PARAMETERIZATION OF COULOMB-ENHANCED AUGER RECOMBINATION COEFFICIENTS IN LOWLY INJECTED CRYSTALLINE SILICON
Authors: ALTERMATT PP SCHMIDT J HEISER G ABERLE AG
Citation: Pp. Altermatt et al., ASSESSMENT AND PARAMETERIZATION OF COULOMB-ENHANCED AUGER RECOMBINATION COEFFICIENTS IN LOWLY INJECTED CRYSTALLINE SILICON, Journal of applied physics, 82(10), 1997, pp. 4938-4944
ACCURATE METHOD FOR THE DETERMINATION OF BULK MINORITY-CARRIER LIFETIMES OF MONOCRYSTALLINE AND MULTICRYSTALLINE SILICON-WAFERS
Authors: SCHMIDT J ABERLE AG
Citation: J. Schmidt et Ag. Aberle, ACCURATE METHOD FOR THE DETERMINATION OF BULK MINORITY-CARRIER LIFETIMES OF MONOCRYSTALLINE AND MULTICRYSTALLINE SILICON-WAFERS, Journal of applied physics, 81(9), 1997, pp. 6186-6199
OBSERVATION OF MULTIPLE DEFECT STATES AT SILICON SILICON-NITRIDE INTERFACES FABRICATED BY LOW-FREQUENCY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: SCHMIDT J SCHUURMANS FM SINKE WC GLUNZ SW ABERLE AG
Citation: J. Schmidt et al., OBSERVATION OF MULTIPLE DEFECT STATES AT SILICON SILICON-NITRIDE INTERFACES FABRICATED BY LOW-FREQUENCY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 71(2), 1997, pp. 252-254
NOVEL COST-EFFECTIVE BIFACIAL SILICON SOLAR-CELLS WITH 19.4-PERCENT FRONT AND 18.1-PERCENT REAR EFFICIENCY
Authors: HUBNER A ABERLE AG HEZEL R
Citation: A. Hubner et al., NOVEL COST-EFFECTIVE BIFACIAL SILICON SOLAR-CELLS WITH 19.4-PERCENT FRONT AND 18.1-PERCENT REAR EFFICIENCY, Applied physics letters, 70(8), 1997, pp. 1008-1010
SPATIALLY-RESOLVED ANALYSIS AND MINIMIZATION OF RESISTIVE LOSSES IN HIGH-EFFICIENCY SI SOLAR-CELLS
Authors: ALTERMATT PP HEISER G ABERLE AG WANG AH ZHAO JH ROBINSON SJ BOWDEN S GREEN MA
Citation: Pp. Altermatt et al., SPATIALLY-RESOLVED ANALYSIS AND MINIMIZATION OF RESISTIVE LOSSES IN HIGH-EFFICIENCY SI SOLAR-CELLS, Progress in photovoltaics, 4(6), 1996, pp. 399-414
COMPARISON OF P-N-JUNCTION AND INVERSION LAYER SILICON SOLAR-CELLS BYMEANS OF EXPERIMENT AND SIMULATION
Authors: ABERLE AG KUHLMANN B MEYER R HUBNER A HAMPE C HEZEL R
Citation: Ag. Aberle et al., COMPARISON OF P-N-JUNCTION AND INVERSION LAYER SILICON SOLAR-CELLS BYMEANS OF EXPERIMENT AND SIMULATION, Progress in photovoltaics, 4(3), 1996, pp. 193-204
REAR SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR-CELLS BY A FLOATING JUNCTION
Authors: ALTERMATT PP HEISER G DAI XM JURGENS J ABERLE AG ROBINSON SJ YOUNG T WENHAM SR GREEN MA
Citation: Pp. Altermatt et al., REAR SURFACE PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR-CELLS BY A FLOATING JUNCTION, Journal of applied physics, 80(6), 1996, pp. 3574-3586
ON THE DATA-ANALYSIS OF LIGHT-BIASED PHOTOCONDUCTANCE DECAY MEASUREMENTS
Authors: ABERLE AG SCHMIDT J BRENDEL R
Citation: Ag. Aberle et al., ON THE DATA-ANALYSIS OF LIGHT-BIASED PHOTOCONDUCTANCE DECAY MEASUREMENTS, Journal of applied physics, 79(3), 1996, pp. 1491-1496
17.1-PERCENT EFFICIENT METAL-INSULATOR-SEMICONDUCTOR INVERSION LAYER SILICON SOLAR-CELLS USING TRUNCATED PYRAMIDS
Authors: GRAUVOGL M ABERLE AG HEZEL R
Citation: M. Grauvogl et al., 17.1-PERCENT EFFICIENT METAL-INSULATOR-SEMICONDUCTOR INVERSION LAYER SILICON SOLAR-CELLS USING TRUNCATED PYRAMIDS, Applied physics letters, 69(10), 1996, pp. 1462-1464
RECORD LOW SURFACE RECOMBINATION VELOCITIES ON 1-OMEGA-CM P-SILICON USING REMOTE PLASMA SILICON-NITRIDE PASSIVATION
Authors: LAUINGER T SCHMIDT J ABERLE AG HEZEL R
Citation: T. Lauinger et al., RECORD LOW SURFACE RECOMBINATION VELOCITIES ON 1-OMEGA-CM P-SILICON USING REMOTE PLASMA SILICON-NITRIDE PASSIVATION, Applied physics letters, 68(9), 1996, pp. 1232-1234
2-DIMENSIONAL NUMERICAL SIMULATIONS OF HIGH-EFFICIENCY SILICON SOLAR-CELLS
Authors: HEISER G ABERLE AG WENHAM SR GREEN MA
Citation: G. Heiser et al., 2-DIMENSIONAL NUMERICAL SIMULATIONS OF HIGH-EFFICIENCY SILICON SOLAR-CELLS, Microelectronics, 26(2-3), 1995, pp. 273-286
RECOMBINATION RATE SATURATION MECHANISMS AT OXIDIZED SURFACES OF HIGH-EFFICIENCY SILICON SOLAR-CELLS
Authors: ROBINSON SJ WENHAM SR ALTERMATT PP ABERLE AG HEISER G GREEN MA
Citation: Sj. Robinson et al., RECOMBINATION RATE SATURATION MECHANISMS AT OXIDIZED SURFACES OF HIGH-EFFICIENCY SILICON SOLAR-CELLS, Journal of applied physics, 78(7), 1995, pp. 4740-4754
LIMITING LOSS MECHANISMS IN 23-PERCENT EFFICIENT SILICON SOLAR-CELLS
Authors: ABERLE AG ALTERMATT PP HEISER G ROBINSON SJ WANG AH ZHAO JH KRUMBEIN U GREEN MA
Citation: Ag. Aberle et al., LIMITING LOSS MECHANISMS IN 23-PERCENT EFFICIENT SILICON SOLAR-CELLS, Journal of applied physics, 77(7), 1995, pp. 3491-3504
INJECTION-LEVEL DEPENDENT SURFACE RECOMBINATION VELOCITIES AT THE SILICON-PLASMA SILICON-NITRIDE INTERFACE
Authors: ABERLE AG LAUINGER T SCHMIDT J HEZEL R
Citation: Ag. Aberle et al., INJECTION-LEVEL DEPENDENT SURFACE RECOMBINATION VELOCITIES AT THE SILICON-PLASMA SILICON-NITRIDE INTERFACE, Applied physics letters, 66(21), 1995, pp. 2828-2830
2-DIMENSIONAL MINORITY-CARRIER FLOW IN HIGH-EFFICIENCY SILICON SOLAR-CELLS AT SHORT-CIRCUIT, OPEN-CIRCUIT AND MAXIMUM POWER POINT OPERATING-CONDITIONS
Authors: ABERLE AG HEISER G GREEN MA
Citation: Ag. Aberle et al., 2-DIMENSIONAL MINORITY-CARRIER FLOW IN HIGH-EFFICIENCY SILICON SOLAR-CELLS AT SHORT-CIRCUIT, OPEN-CIRCUIT AND MAXIMUM POWER POINT OPERATING-CONDITIONS, Solar energy materials and solar cells, 34(1-4), 1994, pp. 149-160
DEPARTURES FROM THE PRINCIPLE OF SUPERPOSITION IN SILICON SOLAR-CELLS
Authors: ROBINSON SJ ABERLE AG GREEN MA
Citation: Sj. Robinson et al., DEPARTURES FROM THE PRINCIPLE OF SUPERPOSITION IN SILICON SOLAR-CELLS, Journal of applied physics, 76(12), 1994, pp. 7920-7930
SURFACE RECOMBINATION VELOCITY-MEASUREMENTS AT THE SILICON-SILICON DIOXIDE INTERFACE BY MICROWAVE-DETECTED PHOTOCONDUCTANCE DECAY
Authors: STEPHENS AW ABERLE AG GREEN MA
Citation: Aw. Stephens et al., SURFACE RECOMBINATION VELOCITY-MEASUREMENTS AT THE SILICON-SILICON DIOXIDE INTERFACE BY MICROWAVE-DETECTED PHOTOCONDUCTANCE DECAY, Journal of applied physics, 76(1), 1994, pp. 363-370
2-DIMENSIONAL NUMERICAL OPTIMIZATION STUDY OF THE REAR CONTACT GEOMETRY OF HIGH-EFFICIENCY SILICON SOLAR-CELLS
Authors: ABERLE AG HEISER G GREEN MA
Citation: Ag. Aberle et al., 2-DIMENSIONAL NUMERICAL OPTIMIZATION STUDY OF THE REAR CONTACT GEOMETRY OF HIGH-EFFICIENCY SILICON SOLAR-CELLS, Journal of applied physics, 75(10), 1994, pp. 5391-5405
RECOMBINATION SATURATION EFFECTS IN SILICON SOLAR-CELLS
Authors: ROBINSON SJ ABERLE AG GREEN MA
Citation: Sj. Robinson et al., RECOMBINATION SATURATION EFFECTS IN SILICON SOLAR-CELLS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1556-1569
Risultati: 1-25 |