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Results: 1-12 |
Results: 12
ELECTRONIC-STRUCTURE OF SI1-X-YCXGEY
Authors: REZKI M TADJER A ABID H AOURAG H
Citation: M. Rezki et al., ELECTRONIC-STRUCTURE OF SI1-X-YCXGEY, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 157-161
PRESSURE-DEPENDENCE OF BAND-GAPS IN CDTE
Authors: ABID H REZKI M AOURAG H
Citation: H. Abid et al., PRESSURE-DEPENDENCE OF BAND-GAPS IN CDTE, Materials science & engineering. B, Solid-state materials for advanced technology, 49(2), 1997, pp. 138-143
ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF THE QUATERNARY ALLOY GA1-XALXASYSB1-Y
Authors: ABID H REZKI M AOURAG H
Citation: H. Abid et al., ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF THE QUATERNARY ALLOY GA1-XALXASYSB1-Y, Materials science & engineering. B, Solid-state materials for advanced technology, 41(3), 1996, pp. 314-321
ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOY GAXIN1-XASYP1-Y
Authors: ABID H BADI N DRIZ M BOUARISSA N BENKABOU KH KHELIFA B AOURAG H
Citation: H. Abid et al., ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOY GAXIN1-XASYP1-Y, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 133-139
CORRELATION BETWEEN HIGH-PRESSURE EFFECTS AND ALLOYING IN GAP AND ALP
Authors: KALAI H KHELIFA B BADI N ABID H AMRANE N SOUDINI B AOURAG H
Citation: H. Kalai et al., CORRELATION BETWEEN HIGH-PRESSURE EFFECTS AND ALLOYING IN GAP AND ALP, Materials chemistry and physics, 39(3), 1995, pp. 180-184
ELECTRONIC-STRUCTURE OF THE PSEUDOBINARY SEMICONDUCTOR ALLOY GAXAL1-XSB
Authors: DRISSKHODJA F ABID H KHELIFA B AMRANE N SOUDINI B DRIZ M BADI N AOURAG H
Citation: F. Drisskhodja et al., ELECTRONIC-STRUCTURE OF THE PSEUDOBINARY SEMICONDUCTOR ALLOY GAXAL1-XSB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 93-97
THE PSEUDOBINARY ALLOY (GA, AL)AS UNDER HYDROSTATIC-PRESSURE
Authors: DRIZ M AOURAG H ABID H KHELIFA B BADI N
Citation: M. Driz et al., THE PSEUDOBINARY ALLOY (GA, AL)AS UNDER HYDROSTATIC-PRESSURE, Materials science & engineering. B, Solid-state materials for advanced technology, 25(2-3), 1994, pp. 159-165
PRESSURE-DEPENDENT PROPERTIES OF BORON PHOSPHIDE
Authors: BADI N AMRANE N ABID H DRIZ M SOUDINI B KHELIFA B AOURAG H
Citation: N. Badi et al., PRESSURE-DEPENDENT PROPERTIES OF BORON PHOSPHIDE, Physica status solidi. b, Basic research, 185(2), 1994, pp. 379-388
THE UNIAXIAL STRAIN EFFECT ON THE TERNARY ALLOY SEMICONDUCTOR GA1-XALXP
Authors: BADI N ABID H SOUDINI B AMRANE N DRIZ M DUFOUR JP AOURAG H KHELIFA B
Citation: N. Badi et al., THE UNIAXIAL STRAIN EFFECT ON THE TERNARY ALLOY SEMICONDUCTOR GA1-XALXP, Physica status solidi. b, Basic research, 184(2), 1994, pp. 365-372
VALENCE AND CONDUCTION BAND-EDGES-CHARGE DENSITIES IN GA1-XALXP MIXED-CRYSTALS
Authors: BADI N ABID H SOUDINI B AMRANE N DRIZ M KHELIFA B AOURAG H
Citation: N. Badi et al., VALENCE AND CONDUCTION BAND-EDGES-CHARGE DENSITIES IN GA1-XALXP MIXED-CRYSTALS, Materials chemistry and physics, 38(3), 1994, pp. 243-249
PRESSURE-DEPENDENCE OF BAND-GAPS IN GAAS, GAP, INP, AND INAS
Authors: ABID H BADI N SOUDINI B AMRANE N DRIZ M HAMMADI M AOURAG H KHELIFA B
Citation: H. Abid et al., PRESSURE-DEPENDENCE OF BAND-GAPS IN GAAS, GAP, INP, AND INAS, Materials chemistry and physics, 38(2), 1994, pp. 162-168
THE HIGH-PRESSURE BEHAVIOR OF ALSB
Authors: AOURAG H SELLAL F ABID H BADI N MAHMOUDI A KHELIFA B
Citation: H. Aourag et al., THE HIGH-PRESSURE BEHAVIOR OF ALSB, Materials chemistry and physics, 33(3-4), 1993, pp. 254-259
Risultati: 1-12 |