Authors: ADAMOWICZ B HASEGAWA H

Citation: B. Adamowicz et H. Hasegawa, COMPUTER-ANALYSIS OF SURFACE RECOMBINATION PROCESS AT SI AND COMPOUNDSEMICONDUCTOR SURFACES AND BEHAVIOR OF SURFACE RECOMBINATION VELOCITY, JPN J A P 1, 37(3B), 1998, pp. 1631-1637

Authors: ADAMOWICZ B OTTAVIANI C QUARESIMA C PERFETTI P

Citation: B. Adamowicz et al., SURFACE PHOTOVOLTAGE IN PHOTOEMISSION-STUDIES AT SI INP(110) HETEROJUNCTIONS/, Acta Physica Polonica. A, 88(4), 1995, pp. 663-666

Authors: ADAMOWICZ B GRILLI ML PEDIO M OTTAVIANI C CAMPO A CAPOZI M QUARESIMA C PERFETTI P

Citation: B. Adamowicz et al., INVERSE-PHOTOEMISSION AND KELVIN PROBE STUDIES OF THE AU GAP(110) INTERFACE/, Vacuum, 46(5-6), 1995, pp. 509-512

Authors: ADAMOWICZ B

Citation: B. Adamowicz, DEPENDENCE OF SILICON SURFACE ELECTRONIC PARAMETERS ON SURFACE FERMI-LEVEL POSITION, Vacuum, 45(2-3), 1994, pp. 167-170