Authors: ADEGBOYEGA GA OSASONA O SUSI E

Citation: Ga. Adegboyega et al., INTRINSIC GETTERING OF MANGANESE IMPURITY IN SILICON SUBSTRATE, Physica status solidi. a, Applied research, 161(1), 1997, pp. 231-235

Authors: ADEGBOYEGA GA PASSARI L BUTTURI MA POGGI A SUZI E

Citation: Ga. Adegboyega et al., ELECTRICAL-PROPERTIES OF SILVER IMPURITIES AND THEIR ANNEALING BEHAVIOR IN P-TYPE FZ SILICON, Journal de physique. III, 6(12), 1996, pp. 1691-1696

Authors: ADEGBOYEGA GA PASSARI L BUTTURRI MA SUSI E

Citation: Ga. Adegboyega et al., THE EFFECTS OF OXYGEN PRECIPITATES ON THE ELECTRICAL-PROPERTIES OF SILVER IMPURITIES IN P-TYPE SILICON (VOL 156, PG 169, 1996), Physica status solidi. a, Applied research, 157(2), 1996, pp. 531-531

Authors: ADEGBOYEGA GA PASSARI L BUTTURRI MA SUSI E

Citation: Ga. Adegboyega et al., THE EFFECTS OF OXYGEN PRECIPITATES ON THE ELECTRICAL-PROPERTIES OF SILVER IMPURITIES IN P-TYPE SILICON, Physica status solidi. a, Applied research, 156(1), 1996, pp. 169-174

Authors: ADEGBOYEGA GA POGGI A

Citation: Ga. Adegboyega et A. Poggi, COPPER IMPURITIES AND THEIR ANNEALING BEHAVIOR IN FZ SILICON, Physica status solidi. a, Applied research, 143(2), 1994, pp. 373-377