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Citation: N. Abuageel et al., TEMPERATURE-DEPENDENCE OF CONDUCTIVITY AND HALL CARRIER CONCENTRATIONOF POLYCRYSTALLINE SIC DEPOSITED ON FUSED-SILICA BY LASER-ABLATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 142-146

Authors: RIMAI L AGER R WEBER WH HANGAS J SAMMAN A ZHU W

Citation: L. Rimai et al., DEPOSITION OF EPITAXIALLY ORIENTED FILMS OF CUBIC SILICON-CARBIDE ON SILICON BY LASER-ABLATION - MICROSTRUCTURE OF THE SILICON-SILICON-CARBIDE INTERFACE, Journal of applied physics, 77(12), 1995, pp. 6601-6608

Authors: RIMAI L AGER R WEBER WH HANGAS J POINDEXTER BD

Citation: L. Rimai et al., PREPARATION OF CRYSTALLOGRAPHICALLY ALIGNED LAYERS OF SILICON-CARBIDEBY PULSED-LASER DEPOSITION OF CARBON ONTO SI WAFERS, Applied physics letters, 65(17), 1994, pp. 2171-2173

Authors: RIMAI L AGER R HANGAS J LOGOTHETIS EM ABUAGEEL N ASLAM M

Citation: L. Rimai et al., PULSED-LASER DEPOSITION OF SIC FILMS ON FUSED-SILICA AND SAPPHIRE SUBSTRATES, Journal of applied physics, 73(12), 1993, pp. 8242-8249