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Results: 1-10 |
Results: 10
GROWTH OF ALN, GAN AND ALXGA1-XN THIN-FILMS ON VICINAL AND ON-AXIS 6H-SIC(0001) SUBSTRATES
Authors: DAVIS RF BREMSER MD PERRY WG AILEY KS
Citation: Rf. Davis et al., GROWTH OF ALN, GAN AND ALXGA1-XN THIN-FILMS ON VICINAL AND ON-AXIS 6H-SIC(0001) SUBSTRATES, Journal of the European Ceramic Society, 17(15-16), 1997, pp. 1775-1779
SURFACE STUDIES OF MODEL SUPPORTED CATALYSTS - NO ADSORPTION ON RH CEO2(001)/
Authors: OVERBURY SH HUNTLEY DR MULLINS DR AILEY KS RADULOVIC PV
Citation: Sh. Overbury et al., SURFACE STUDIES OF MODEL SUPPORTED CATALYSTS - NO ADSORPTION ON RH CEO2(001)/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1647-1652
GROWTH OF ALN AND GAN THIN-FILMS VIA OMVPE AND GAS-SOURCE MBE AND THEIR CHARACTERIZATION
Authors: DAVIS RF WEEKS TW BREMSER MD TANAKA S KERN RS SITAR Z AILEY KS PERRY WG WANG C
Citation: Rf. Davis et al., GROWTH OF ALN AND GAN THIN-FILMS VIA OMVPE AND GAS-SOURCE MBE AND THEIR CHARACTERIZATION, Solid-state electronics, 41(2), 1997, pp. 129-134
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF III-V NITRIDES
Authors: DAVIS RF PAISLEY MJ SITAR Z KESTER DJ AILEY KS LINTHICUM K ROWLAND LB TANAKA S KERN RS
Citation: Rf. Davis et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF III-V NITRIDES, Journal of crystal growth, 178(1-2), 1997, pp. 87-101
UNDOPED AND DOPED GAN THIN-FILMS DEPOSITED ON HIGH-TEMPERATURE MONOCRYSTALLINE AIN BUFFER LAYERS ON VICINAL AND ON-AXIS ALPHA(6H)-SIC(0001)SUBSTRATES VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: WEEKS TW BREMSER MD AILEY KS CARLSON E PERRY WG PINER EL ELMASRY NA DAVIS RF
Citation: Tw. Weeks et al., UNDOPED AND DOPED GAN THIN-FILMS DEPOSITED ON HIGH-TEMPERATURE MONOCRYSTALLINE AIN BUFFER LAYERS ON VICINAL AND ON-AXIS ALPHA(6H)-SIC(0001)SUBSTRATES VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of materials research, 11(4), 1996, pp. 1011-1018
GAN THIN-FILMS DEPOSITED VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY ON ALPHA(6H)-SIC(0001) USING HIGH-TEMPERATURE MONOCRYSTALLINE ALN BUFFER LAYERS
Authors: WEEKS TW BREMSER MD AILEY KS CARLSON E PERRY WG DAVIS RF
Citation: Tw. Weeks et al., GAN THIN-FILMS DEPOSITED VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY ON ALPHA(6H)-SIC(0001) USING HIGH-TEMPERATURE MONOCRYSTALLINE ALN BUFFER LAYERS, Applied physics letters, 67(3), 1995, pp. 401-403
DEPOSITION AND CHARACTERIZATION OF BORON-NITRIDE THIN-FILMS
Authors: KESTER DJ AILEY KS DAVIS RF
Citation: Dj. Kester et al., DEPOSITION AND CHARACTERIZATION OF BORON-NITRIDE THIN-FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 332-336
GROWTH AND CHARACTERIZATION OF CUBIC BORON-NITRIDE THIN-FILMS
Authors: KESTER DJ AILEY KS LICHTENWALNER DJ DAVIS RF
Citation: Dj. Kester et al., GROWTH AND CHARACTERIZATION OF CUBIC BORON-NITRIDE THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3074-3081
DEPOSITION OF III-N THIN-FILMS BY MOLECULAR-BEAM EPITAXY
Authors: DAVIS RF PAISLEY MJ SITAR Z KESTER DJ AILEY KS WANG CO
Citation: Rf. Davis et al., DEPOSITION OF III-N THIN-FILMS BY MOLECULAR-BEAM EPITAXY, Microelectronics, 25(8), 1994, pp. 661-674
PHASE EVOLUTION IN BORON-NITRIDE THIN-FILMS
Authors: KESTER DJ AILEY KS DAVIS RF MORE KL
Citation: Dj. Kester et al., PHASE EVOLUTION IN BORON-NITRIDE THIN-FILMS, Journal of materials research, 8(6), 1993, pp. 1213-1216
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