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Results: 1-15 |
Results: 15
THE INFLUENCE OF FLUORINE ON BORON-ENHANCED DIFFUSION IN SILICON BY BF2-TEMPERATURE RAPID THERMAL ANNEAL( IMPLANTATION THROUGH OXIDE DURINGHIGH)
Authors: WANG LZ LUO MSC TSENG HH AJURIA SA
Citation: Lz. Wang et al., THE INFLUENCE OF FLUORINE ON BORON-ENHANCED DIFFUSION IN SILICON BY BF2-TEMPERATURE RAPID THERMAL ANNEAL( IMPLANTATION THROUGH OXIDE DURINGHIGH), Journal of the Electrochemical Society, 144(11), 1997, pp. 298-301
OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE
Authors: MAITI B TOBIN PJ OKADA Y REID KG AJURIA SA HEGDE RI KAUSHIK V
Citation: B. Maiti et al., OXYNITRIDE GATE DIELECTRIC GROWN IN NITRIC-OXIDE (NO) - THE EFFECT OFREOXIDATION ON DIELECTRIC RELIABILITY OF THE ACTIVE EDGE, IEEE electron device letters, 17(6), 1996, pp. 279-281
REEVALUATION OF THE BENEFITS OF POSTOXIDATION ANNEALING ON SUB-100 ANGSTROM GATE BRIDE QUALITY
Authors: AJURIA SA MAITI B TOBIN PJ MELE TC
Citation: Sa. Ajuria et al., REEVALUATION OF THE BENEFITS OF POSTOXIDATION ANNEALING ON SUB-100 ANGSTROM GATE BRIDE QUALITY, IEEE electron device letters, 17(6), 1996, pp. 282-284
SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY (VOL41, PG 56, 1994)
Authors: KENKARE PU MAZURE C HAYDEN JD PFIESTER JR KO J KIRSCH HC AJURIA SA CRABTREE P VUONG T
Citation: Pu. Kenkare et al., SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY (VOL41, PG 56, 1994), I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1564-1564
GROWTH AND SURFACE-CHEMISTRY OF OXYNITRIDE GATE DIELECTRIC USING NITRIC-OXIDE
Authors: HEGDE RI TOBIN PJ REID KG MAITI B AJURIA SA
Citation: Ri. Hegde et al., GROWTH AND SURFACE-CHEMISTRY OF OXYNITRIDE GATE DIELECTRIC USING NITRIC-OXIDE, Applied physics letters, 66(21), 1995, pp. 2882-2884
KINETIC-ANALYSIS OF SILICON OXIDATIONS IN THE THIN REGIME BY INCREMENTAL GROWTH
Authors: AJURIA SA KENKARE PU NGHIEM A MELE TC
Citation: Sa. Ajuria et al., KINETIC-ANALYSIS OF SILICON OXIDATIONS IN THE THIN REGIME BY INCREMENTAL GROWTH, Journal of applied physics, 76(8), 1994, pp. 4618-4624
FURNACE FORMATION OF SILICON OXYNITRIDE THIN DIELECTRICS IN NITROUS-OXIDE (N2O) - THE ROLE OF NITRIC-OXIDE (NO)
Authors: TOBIN PJ OKADA Y AJURIA SA LAKHOTIA V FEIL WA HEDGE RI
Citation: Pj. Tobin et al., FURNACE FORMATION OF SILICON OXYNITRIDE THIN DIELECTRICS IN NITROUS-OXIDE (N2O) - THE ROLE OF NITRIC-OXIDE (NO), Journal of applied physics, 75(3), 1994, pp. 1811-1817
FURNACE GROWN GATE OXYNITRIDE USING NITRIC-OXIDE (NO)
Authors: OKADA Y TOBIN PJ REID KG HEGDE RI MAITI B AJURIA SA
Citation: Y. Okada et al., FURNACE GROWN GATE OXYNITRIDE USING NITRIC-OXIDE (NO), I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1608-1613
SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY
Authors: KENKARE PU MAZURE C HAYDEN JD PFIESTER JR KO J KIRSCH HC AJURIA SA CRABTREE P VUONG T
Citation: Pu. Kenkare et al., SCALING OF POLY-ENCAPSULATED LOCOS FOR 0.35 MU-M CMOS TECHNOLOGY, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 56-62
UNIFORMITY OF THE N2O FURNACE OXYNITRIDE PROCESS FOR THE FORMATION OFTHIN TUNNEL DIELECTRICS
Authors: OKADA Y TABIN PJ REID KG HEGDE RI AJURIA SA
Citation: Y. Okada et al., UNIFORMITY OF THE N2O FURNACE OXYNITRIDE PROCESS FOR THE FORMATION OFTHIN TUNNEL DIELECTRICS, Journal of the Electrochemical Society, 141(12), 1994, pp. 3500-3504
LOW-DEFECT-DENSITY AND HIGH-RELIABILITY FETMOS EEPROMS FABRICATED USING FURNACE N2O OXYNITRIDATION
Authors: KIM YS OKADA Y CHANG KM TOBIN PJ MORTON B CHOE H BOWERS M KUO C CHRUDIMSKY D AJURIA SA YEARGAIN JR
Citation: Ys. Kim et al., LOW-DEFECT-DENSITY AND HIGH-RELIABILITY FETMOS EEPROMS FABRICATED USING FURNACE N2O OXYNITRIDATION, IEEE electron device letters, 14(7), 1993, pp. 342-344
INTERPRETATION OF ELLIPSOMETRY MEASUREMENTS TAKEN FROM ANNEALED HEAVILY ARSENIC-IMPLANTED SILICON
Authors: AJURIA SA TOMPKINS HG GROVE CL CARREJO JP
Citation: Sa. Ajuria et al., INTERPRETATION OF ELLIPSOMETRY MEASUREMENTS TAKEN FROM ANNEALED HEAVILY ARSENIC-IMPLANTED SILICON, Journal of the Electrochemical Society, 140(9), 1993, pp. 2710-2714
COMPARISON OF SURFACE-CHARGE ANALYSIS AND MOS C-V AS TECHNIQUES FOR IONIC IMPURITY DETECTION IN SI SIO2 STRUCTURES/
Authors: AJURIA SA FITCH JT WORKMAN D MELE TC
Citation: Sa. Ajuria et al., COMPARISON OF SURFACE-CHARGE ANALYSIS AND MOS C-V AS TECHNIQUES FOR IONIC IMPURITY DETECTION IN SI SIO2 STRUCTURES/, Journal of the Electrochemical Society, 140(7), 1993, pp. 120000113-120000115
EVALUATION OF INTERFACIAL NITROGEN CONCENTRATION OF RTP OXYNITRIDES BY REOXIDATION
Authors: OKADA Y TOBIN PJ LAKHOTIA V AJURIA SA HEGDE RI LIAO JC RUSHBROOK PP ARIAS LJ
Citation: Y. Okada et al., EVALUATION OF INTERFACIAL NITROGEN CONCENTRATION OF RTP OXYNITRIDES BY REOXIDATION, Journal of the Electrochemical Society, 140(6), 1993, pp. 87-89
RELATIONSHIP BETWEEN GROWTH-CONDITIONS, NITROGEN PROFILE, AND CHARGE TO BREAKDOWN OF GATE OXYNITRIDES GROWN FROM PURE N2O
Authors: OKADA Y TOBIN PJ LAKHOTIA V FEIL WA AJURIA SA HEGDE RI
Citation: Y. Okada et al., RELATIONSHIP BETWEEN GROWTH-CONDITIONS, NITROGEN PROFILE, AND CHARGE TO BREAKDOWN OF GATE OXYNITRIDES GROWN FROM PURE N2O, Applied physics letters, 63(2), 1993, pp. 194-196
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