AAAAAA

   
Results: 1-9 |
Results: 9
OPTICAL AND ELECTRICAL CHARACTERIZATION OF LOW-TEMPERATURE-GROWN GAINAS
Authors: KHIROUNI K ALAYA S NAGLE J BOURGOIN JC
Citation: K. Khirouni et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF LOW-TEMPERATURE-GROWN GAINAS, Semiconductor science and technology, 13(9), 1998, pp. 1031-1035
OPTICAL SPECTROSCOPY OF TITANIUM-DOPED CDZNTE
Authors: DAMMAK M ALAYA S ZERRAI A BREMOND G TRIBOULET R
Citation: M. Dammak et al., OPTICAL SPECTROSCOPY OF TITANIUM-DOPED CDZNTE, Semiconductor science and technology, 13(7), 1998, pp. 762-768
POOLE-FRENKEL-EFFECT ASSISTED EMISSION FROM DEEP DONOR LEVEL IN CHROMIUM-DOPED GAP
Authors: AJJEL R ZAIDI MA ALAYA S BREMOND G GUILLOT G BOURGOIN JC
Citation: R. Ajjel et al., POOLE-FRENKEL-EFFECT ASSISTED EMISSION FROM DEEP DONOR LEVEL IN CHROMIUM-DOPED GAP, Applied physics letters, 72(3), 1998, pp. 302-304
THE METASTABILITY OF DEEP DONOR DEFECTS IN SEMICONDUCTOR COMPOUNDS
Authors: BOURGOIN JC ZAZOUI M ALAYA S NEFFATI T
Citation: Jc. Bourgoin et al., THE METASTABILITY OF DEEP DONOR DEFECTS IN SEMICONDUCTOR COMPOUNDS, Journal de physique. III, 7(11), 1997, pp. 2145-2151
INVESTIGATION OF A NEW PHOTOLUMINESCENCE BAND AT 1.727-EV IN SI-DOPEDGA0.71AL0.29AS
Authors: KHIROUNI K RZIGUA F ALAYA S SELMI A SALLESE JP GIBART P
Citation: K. Khirouni et al., INVESTIGATION OF A NEW PHOTOLUMINESCENCE BAND AT 1.727-EV IN SI-DOPEDGA0.71AL0.29AS, Physica status solidi. b, Basic research, 201(2), 1997, pp. 515-520
ROLE OF ZINC IN THE OPTICAL-PROPERTIES OF VANADIUM-DOPED CDZNTE
Authors: DAMMAK M ALAYA S BREMOND G TRIBOULET R
Citation: M. Dammak et al., ROLE OF ZINC IN THE OPTICAL-PROPERTIES OF VANADIUM-DOPED CDZNTE, Semiconductor science and technology, 12(7), 1997, pp. 888-893
CHARACTERIZATION OF CLOSED SPACE VAPOR TRANSPORT GAP EPITAXIAL LAYERS
Authors: MIMILAARROYO J DIAZ J DERBALI MB MAAREF H ALAYA S STIEVENARD D BOURGON JC
Citation: J. Mimilaarroyo et al., CHARACTERIZATION OF CLOSED SPACE VAPOR TRANSPORT GAP EPITAXIAL LAYERS, Journal of electronic materials, 25(12), 1996, pp. 1851-1857
INTRINSIC AND EXTRINSIC RADIATIVE RECOMBINATION PROCESSES IN GAAS GAINP QUANTUM-WELLS/
Authors: MEJRI H ALAYA S MAAREF H BOURGOIN JC BARRAU J BACQUET G
Citation: H. Mejri et al., INTRINSIC AND EXTRINSIC RADIATIVE RECOMBINATION PROCESSES IN GAAS GAINP QUANTUM-WELLS/, Journal of luminescence, 65(1), 1995, pp. 11-17
BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS
Authors: FENG SL KRYNICKI J DONCHEV V BOURGOIN JC DIFORTEPOISSON M BRYLINSKI C DELAGE S BLANCK H ALAYA S
Citation: Sl. Feng et al., BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS, Semiconductor science and technology, 8(12), 1993, pp. 2092-2096
Risultati: 1-9 |