Authors: MATTAUSCH HJ ALLINGER R KERBER M BRAUN H

Citation: Hj. Mattausch et al., A DEGRADATION MECHANISM OF EEPROM CELL OPERATIONAL MARGINS WHICH REMAINS UNDETECTED BY CONVENTIONAL QUALITY ASSURANCE, IEEE electron device letters, 19(11), 1998, pp. 402-404

Authors: MATTAUSCH HJ KERBER M ALLINGER R BRAUN H

Citation: Hj. Mattausch et al., LOCALIZED HIGHLY STABLE ELECTRICAL PASSIVATION OF THE THERMAL OXIDE ON NONPLANAR POLYCRYSTALLINE SILICON, Applied physics letters, 71(23), 1997, pp. 3391-3393