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Results: 1-12 |
Results: 12
INFLUENCE OF INTERFACE DISLOCATIONS ON SURFACE KINETICS DURING EPITAXIAL-GROWTH OF INGAAS
Authors: ALVAREZ AL CALLE F VALTUENA JF FAURA J SANCHEZ MA CALLEJA E MUNOZ E MORANTE JR GONZALEZ D ARAUJO D ROJA RG
Citation: Al. Alvarez et al., INFLUENCE OF INTERFACE DISLOCATIONS ON SURFACE KINETICS DURING EPITAXIAL-GROWTH OF INGAAS, Applied surface science, 123, 1998, pp. 303-307
CENTRAL OVEREXPRESSION OF THE TRH PRECURSOR GENE INDUCES HYPERTENSIONIN RATS - ANTISENSE REVERSAL
Authors: GARCIA SI PORTO PI ALVAREZ AL MARTINEZ VN SHAURLI D FINKIELMAN S PIROLA CJ
Citation: Si. Garcia et al., CENTRAL OVEREXPRESSION OF THE TRH PRECURSOR GENE INDUCES HYPERTENSIONIN RATS - ANTISENSE REVERSAL, Hypertension, 30(3), 1997, pp. 759-766
THYROTROPIN-RELEASING-HORMONE PRECURSOR (PRE-TRH) GENE OVER-EXPRESSION INDUCES HYPERTENSION IN RATS - ANTISENSE REVERSAL
Authors: GARCIA SI PORTO PI ALVAREZ AL SHAURLI D FINKIELMAN S PIROLA CJ
Citation: Si. Garcia et al., THYROTROPIN-RELEASING-HORMONE PRECURSOR (PRE-TRH) GENE OVER-EXPRESSION INDUCES HYPERTENSION IN RATS - ANTISENSE REVERSAL, Hypertension, 29(3), 1997, pp. 195-195
INFLUENCE OF THE SURFACE-MORPHOLOGY ON THE RELAXATION OF LOW-STRAINEDINXGA1-XAS LINEAR BUFFER STRUCTURES
Authors: VALTUENA JF SACEDON A ALVAREZ AL IZPURA I CALLE F CALLEJA E MACPHERSON G GOODHEW PJ PACHECO FJ GARCIA R MOLINA SI
Citation: Jf. Valtuena et al., INFLUENCE OF THE SURFACE-MORPHOLOGY ON THE RELAXATION OF LOW-STRAINEDINXGA1-XAS LINEAR BUFFER STRUCTURES, Journal of crystal growth, 182(3-4), 1997, pp. 281-291
NONUNIFORM STRAIN RELAXATION IN INXGA1-XAS LAYERS
Authors: ALVAREZ AL CALLE F SACEDON A CALLEJA E MUNOZ E GARCIA R GONZALEZ L GONZALEZ Y COLSON HG KIDD P BEANLAND R GOODHEW P
Citation: Al. Alvarez et al., NONUNIFORM STRAIN RELAXATION IN INXGA1-XAS LAYERS, Solid-state electronics, 40(1-8), 1996, pp. 647-651
STRAIN DIAGNOSIS OF (001)INGAAS AND (111)INGAAS LAYERS BY OPTICAL TECHNIQUES
Authors: CALLE F ALVAREZ AL SACEDON A CALLEJA E MUNOZ E
Citation: F. Calle et al., STRAIN DIAGNOSIS OF (001)INGAAS AND (111)INGAAS LAYERS BY OPTICAL TECHNIQUES, Physica status solidi. a, Applied research, 152(1), 1995, pp. 201-209
OPTICAL CHARACTERIZATION OF [111]B INGAAS LAYERS
Authors: CALLE F SACEDON A ALVAREZ AL CALLEJA E MUNO E COLSON HG KIDD P
Citation: F. Calle et al., OPTICAL CHARACTERIZATION OF [111]B INGAAS LAYERS, Microelectronics, 26(8), 1995, pp. 821-826
A RAMAN-SPECTROSCOPIC STUDY OF THE SI, BE, AND C INCORPORATION IN INXGA1-XAS RELAXED LAYERS
Authors: ALVAREZ AL CALLE F SACEDON A CALLEJA E MUNOZ E WAGNER J MAIER M MAZUELAS A PLOOG KH
Citation: Al. Alvarez et al., A RAMAN-SPECTROSCOPIC STUDY OF THE SI, BE, AND C INCORPORATION IN INXGA1-XAS RELAXED LAYERS, Journal of applied physics, 78(7), 1995, pp. 4690-4695
INFLUENCE OF IN ON SI LOCAL VIBRATIONAL-MODES IN INXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12)
Authors: ALVAREZ AL CALLE F WAGNER J SACEDON A MAIER M DEAVILA SF LOURENCO MA CALLEJA E MUNOZ E
Citation: Al. Alvarez et al., INFLUENCE OF IN ON SI LOCAL VIBRATIONAL-MODES IN INXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12), Journal of applied physics, 76(12), 1994, pp. 7797-7804
RELAXATION OF INGAAS LAYERS GROWN ON (111)B GAAS
Authors: SACEDON A CALLE F ALVAREZ AL CALLEJA E MUNOZ E BEANLAND R GOODHEW P
Citation: A. Sacedon et al., RELAXATION OF INGAAS LAYERS GROWN ON (111)B GAAS, Applied physics letters, 65(25), 1994, pp. 3212-3214
CHARACTERIZATION OF HETEROINTERFACES AND SURFACES IN INSB ON GAAS ANDIN INAS ALSB QUANTUM-WELLS/
Authors: WAGNER J SCHMITZ J ALVAREZ AL KOIDL P RALSTON JD
Citation: J. Wagner et al., CHARACTERIZATION OF HETEROINTERFACES AND SURFACES IN INSB ON GAAS ANDIN INAS ALSB QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 262-265
SURFACE FERMI-LEVEL PINNING IN EPITAXIAL INSB STUDIED BY ELECTRIC-FIELD-INDUCED RAMAN-SCATTERING
Authors: WAGNER J ALVAREZ AL SCHMITZ J RALSTON JD KOIDL P
Citation: J. Wagner et al., SURFACE FERMI-LEVEL PINNING IN EPITAXIAL INSB STUDIED BY ELECTRIC-FIELD-INDUCED RAMAN-SCATTERING, Applied physics letters, 63(3), 1993, pp. 349-351
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