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Results: 1-19 |
Results: 19
STUDY ON MOMENTUM DENSITY IN NARROW-GAP MIXED III-V ALLOYS BY POSITRON-ANNIHILATION UNDER PRESSURE
Authors: BOUARISSA N CERTIER M AMRANE N AOURAG H
Citation: N. Bouarissa et al., STUDY ON MOMENTUM DENSITY IN NARROW-GAP MIXED III-V ALLOYS BY POSITRON-ANNIHILATION UNDER PRESSURE, Materials science & engineering. B, Solid-state materials for advanced technology, 54(3), 1998, pp. 161-167
PARABOLIC QUANTUM-WELLS OF ALGAAS - BAND-STRUCTURE CALCULATIONS
Authors: SEKKAL N ABBAR B TEKIA F AMRANE N AOURAG H
Citation: N. Sekkal et al., PARABOLIC QUANTUM-WELLS OF ALGAAS - BAND-STRUCTURE CALCULATIONS, Infrared physics & technology, 37(4), 1996, pp. 489-498
POSITRON-ANNIHILATION STUDIES IN DIAMOND
Authors: AMRANE N SOUDINI B AMRANE N AOURAG H
Citation: N. Amrane et al., POSITRON-ANNIHILATION STUDIES IN DIAMOND, Materials science & engineering. B, Solid-state materials for advanced technology, 40(2-3), 1996, pp. 119-125
WORK FUNCTION AND ENERGY-LEVELS OF POSITRONS IN ELEMENTAL SEMICONDUCTORS
Authors: BOUARISSA N ABBAR B DUFOUR JP AMRANE N AOURAG H
Citation: N. Bouarissa et al., WORK FUNCTION AND ENERGY-LEVELS OF POSITRONS IN ELEMENTAL SEMICONDUCTORS, Materials chemistry and physics, 44(3), 1996, pp. 267-272
BAND-STRUCTURE CALCULATION OF GESN AND SISN
Authors: AMRANE N ABDERRAHMANE SA AOURAG H
Citation: N. Amrane et al., BAND-STRUCTURE CALCULATION OF GESN AND SISN, Infrared physics & technology, 36(5), 1995, pp. 843-848
ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS INXGA1-X AND INASXSB1-X
Authors: BOUARISSA N AMRANE N AOURAG H
Citation: N. Bouarissa et al., ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS INXGA1-X AND INASXSB1-X, Infrared physics & technology, 36(4), 1995, pp. 755-761
PREDICTED MODIFICATIONS IN THE DIRECT AND INDIRECT GAPS OF GAP
Authors: BOUHAFS B FERHAT M AMRANE N KHELIFA B AOURAG H
Citation: B. Bouhafs et al., PREDICTED MODIFICATIONS IN THE DIRECT AND INDIRECT GAPS OF GAP, Infrared physics & technology, 36(4), 1995, pp. 791-797
RESONANT-TUNNELING EFFECT THROUGH A PARABOLIC QUANTUM-WELL
Authors: SEKKAL N AOURAG H AMRANE N SOUDINI B
Citation: N. Sekkal et al., RESONANT-TUNNELING EFFECT THROUGH A PARABOLIC QUANTUM-WELL, Physica. B, Condensed matter, 215(2-3), 1995, pp. 171-177
ELECTRONIC AND POSITRONIC STRUCTURE OF DIAMOND UNDER NORMAL AND HIGH-PRESSURE
Authors: AOURAG H ABDERRAHMANE SA AMRANE N AMRANE N BOUARISSA N
Citation: H. Aourag et al., ELECTRONIC AND POSITRONIC STRUCTURE OF DIAMOND UNDER NORMAL AND HIGH-PRESSURE, Physica status solidi. b, Basic research, 189(2), 1995, pp. 417-432
PRESSURE-DEPENDENCE OF ELECTRON AND POSITRON BAND STRUCTURES IN ELEMENTAL SEMICONDUCTORS
Authors: ALKHAFAJI ST AMRANE N BOUARISSA N BADI N SOUDINI B SEHIL M AOURAG H
Citation: St. Alkhafaji et al., PRESSURE-DEPENDENCE OF ELECTRON AND POSITRON BAND STRUCTURES IN ELEMENTAL SEMICONDUCTORS, Physica status solidi. b, Basic research, 189(1), 1995, pp. 139-151
CORRELATION BETWEEN HIGH-PRESSURE EFFECTS AND ALLOYING IN GAP AND ALP
Authors: KALAI H KHELIFA B BADI N ABID H AMRANE N SOUDINI B AOURAG H
Citation: H. Kalai et al., CORRELATION BETWEEN HIGH-PRESSURE EFFECTS AND ALLOYING IN GAP AND ALP, Materials chemistry and physics, 39(3), 1995, pp. 180-184
POSITRON-ANNIHILATION STUDIES IN GAXIN1-XAS
Authors: SOUDINI B AMRANE N BADI N KHELIFA B AOURAG H
Citation: B. Soudini et al., POSITRON-ANNIHILATION STUDIES IN GAXIN1-XAS, Solid state communications, 96(12), 1995, pp. 987-991
ELECTRONIC-STRUCTURE OF THE PSEUDOBINARY SEMICONDUCTOR ALLOY GAXAL1-XSB
Authors: DRISSKHODJA F ABID H KHELIFA B AMRANE N SOUDINI B DRIZ M BADI N AOURAG H
Citation: F. Drisskhodja et al., ELECTRONIC-STRUCTURE OF THE PSEUDOBINARY SEMICONDUCTOR ALLOY GAXAL1-XSB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 93-97
PRESSURE-DEPENDENT PROPERTIES OF BORON PHOSPHIDE
Authors: BADI N AMRANE N ABID H DRIZ M SOUDINI B KHELIFA B AOURAG H
Citation: N. Badi et al., PRESSURE-DEPENDENT PROPERTIES OF BORON PHOSPHIDE, Physica status solidi. b, Basic research, 185(2), 1994, pp. 379-388
PRESSURE-DEPENDENCE OF POSITRON-ANNIHILATION IN SI
Authors: BENKABOU F DUFOUR JP SOUDINI B AMRANE N KHELIFA B AOURAG H
Citation: F. Benkabou et al., PRESSURE-DEPENDENCE OF POSITRON-ANNIHILATION IN SI, Physica status solidi. b, Basic research, 184(2), 1994, pp. 355-363
THE UNIAXIAL STRAIN EFFECT ON THE TERNARY ALLOY SEMICONDUCTOR GA1-XALXP
Authors: BADI N ABID H SOUDINI B AMRANE N DRIZ M DUFOUR JP AOURAG H KHELIFA B
Citation: N. Badi et al., THE UNIAXIAL STRAIN EFFECT ON THE TERNARY ALLOY SEMICONDUCTOR GA1-XALXP, Physica status solidi. b, Basic research, 184(2), 1994, pp. 365-372
VALENCE AND CONDUCTION BAND-EDGES-CHARGE DENSITIES IN GA1-XALXP MIXED-CRYSTALS
Authors: BADI N ABID H SOUDINI B AMRANE N DRIZ M KHELIFA B AOURAG H
Citation: N. Badi et al., VALENCE AND CONDUCTION BAND-EDGES-CHARGE DENSITIES IN GA1-XALXP MIXED-CRYSTALS, Materials chemistry and physics, 38(3), 1994, pp. 243-249
PRESSURE-DEPENDENCE OF BAND-GAPS IN GAAS, GAP, INP, AND INAS
Authors: ABID H BADI N SOUDINI B AMRANE N DRIZ M HAMMADI M AOURAG H KHELIFA B
Citation: H. Abid et al., PRESSURE-DEPENDENCE OF BAND-GAPS IN GAAS, GAP, INP, AND INAS, Materials chemistry and physics, 38(2), 1994, pp. 162-168
POSITRON AFFINITY OF GAXIN1-XAS AS A FUNCTION OF THE MOLE FRACTION
Authors: SOUDINI B AOURAG H AMRANE N SEHIL M BOUSSAHLA Z SELLAL F KHELIFA B MAHMOUDI A
Citation: B. Soudini et al., POSITRON AFFINITY OF GAXIN1-XAS AS A FUNCTION OF THE MOLE FRACTION, Materials chemistry and physics, 36(3-4), 1994, pp. 271-275
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