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Results: 1-25 |

Results: 25

THE C A RATIO OF HELICAL MAGNETIC-STRUCTURES IN RARE-EARTH MATERIALS/

Authors: PALMER SB MCINTYRE GJ ANDRIANOV AV MELVILLE RJ

Citation: Sb. Palmer et al., THE C A RATIO OF HELICAL MAGNETIC-STRUCTURES IN RARE-EARTH MATERIALS/, Journal of magnetism and magnetic materials, 177, 1998, pp. 1023-1024

MBE GROWTH AND CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE

Authors: DEWSNIP DJ ORTON JW LACKLISON DE FLANNERY L ANDRIANOV AV HARRISON I HOOPER SE CHENG TS FOXON CT NOVIKOV SN BER BY KUDRIAVTSEV YA

Citation: Dj. Dewsnip et al., MBE GROWTH AND CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE, Semiconductor science and technology, 13(8), 1998, pp. 927-935

PHOTOLUMINESCENCE OF MBE GROWN WURTZITE BE-DOPED GAN

Authors: DEWSNIP DJ ANDRIANOV AV HARRISON I ORTON JW LACKLISON DE REN GB HOOPER SE CHENG TS FOXON CT

Citation: Dj. Dewsnip et al., PHOTOLUMINESCENCE OF MBE GROWN WURTZITE BE-DOPED GAN, Semiconductor science and technology, 13(5), 1998, pp. 500-504

LUMINESCENCE OF POROUS SILICON IN THE INFRARED SPECTRAL REGION AT ROOM-TEMPERATURE

Authors: POLISSKII G KOCH F SRESELI OM ANDRIANOV AV

Citation: G. Polisskii et al., LUMINESCENCE OF POROUS SILICON IN THE INFRARED SPECTRAL REGION AT ROOM-TEMPERATURE, Semiconductors, 31(3), 1997, pp. 304-307

OBSERVATION OF RESONANT RAMAN LINES DURING THE PHOTOLUMINESCENCE OF DOPED GAN

Authors: DEWSNIP DJ ANDRIANOV AV HARRISON I LACKLISON DE ORTON JW MORGAN J REN GB CHENG TS HOOPER SE FOXON CT

Citation: Dj. Dewsnip et al., OBSERVATION OF RESONANT RAMAN LINES DURING THE PHOTOLUMINESCENCE OF DOPED GAN, Semiconductor science and technology, 12(1), 1997, pp. 55-58

PHOTOLUMINESCENCE FROM GAN FILMS GROWN BY MBE ON LIGAO2 SUBSTRATE

Authors: ANDRIANOV AV LACKLISON DE ORTON JW CHENG TS FOXON CT ODONNELL KP NICHOLLS JFH

Citation: Av. Andrianov et al., PHOTOLUMINESCENCE FROM GAN FILMS GROWN BY MBE ON LIGAO2 SUBSTRATE, Semiconductor science and technology, 12(1), 1997, pp. 59-63

EVIDENCE OF PRESSURE-INDUCED ANTIFERROMAGNETISM IN FERROMAGNETIC HO0.4GD0.6

Authors: ANDRIANOV AV CHISTIAKOV OD

Citation: Av. Andrianov et Od. Chistiakov, EVIDENCE OF PRESSURE-INDUCED ANTIFERROMAGNETISM IN FERROMAGNETIC HO0.4GD0.6, Physical review. B, Condensed matter, 55(21), 1997, pp. 14107-14108

PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES

Authors: ORTON JW LACKLISON DE ANDRIANOV AV CHENG TS DEWSNIP DJ FOXON CT JENKINS LC HOOPER SE

Citation: Jw. Orton et al., PHOTOLUMINESCENCE STUDY OF SILICON-DOPED GAN GROWN BY MBE ON GAAS SUBSTRATES, Solid-state electronics, 41(2), 1997, pp. 219-222

ACTIVATED NITROGEN-SOURCE WITH AN INVERTED MAGNETRON GEOMETRY FOR MOLECULAR-BEAM EPITAXY OF GAN

Authors: DROZDOVA SV KIPSHIDZE GD LEBEDEV VB NOVIKOV SV SHARONOVA LV SHIK AY ZHMERIK VN KUZNETSOV VM ANDRIANOV AV GUREVICH AM ZINOVEV NN FOXON CT CHENG TS

Citation: Sv. Drozdova et al., ACTIVATED NITROGEN-SOURCE WITH AN INVERTED MAGNETRON GEOMETRY FOR MOLECULAR-BEAM EPITAXY OF GAN, Semiconductors, 30(7), 1996, pp. 690-693

INJECTION ELECTROLUMINESCENCE OF PIN-THIN -FILMED STRUCTURES BASED ONHYDROGENIZED SILICON PREPARED UNDER SUPERHIGH SILANE DILUTION WITH HYDROGEN

Authors: ANDREEV AA ANDRIANOV AV AVERBUKH BY MAVLYANOV R

Citation: Aa. Andreev et al., INJECTION ELECTROLUMINESCENCE OF PIN-THIN -FILMED STRUCTURES BASED ONHYDROGENIZED SILICON PREPARED UNDER SUPERHIGH SILANE DILUTION WITH HYDROGEN, Fizika tverdogo tela, 38(1), 1996, pp. 19-29

LOW-TEMPERATURE LUMINESCENCE STUDY OF GAN FILMS GROWN BY MBE

Authors: ANDRIANOV AV LACKLISON DE ORTON JW DEWSNIP DJ HOOPER SE FOXON CT

Citation: Av. Andrianov et al., LOW-TEMPERATURE LUMINESCENCE STUDY OF GAN FILMS GROWN BY MBE, Semiconductor science and technology, 11(3), 1996, pp. 366-371

PHOTOLUMINESCENCE STUDIES OF CURRENT-INDUCED NONEQUILIBRIUM STATES INMAGNETICALLY QUANTIZED 2-DIMENSIONAL ELECTRON GASES

Authors: ZINOVEV NN ANDRIANOV AV CHALLIS LJ FOXON CT HARRIS JJ

Citation: Nn. Zinovev et al., PHOTOLUMINESCENCE STUDIES OF CURRENT-INDUCED NONEQUILIBRIUM STATES INMAGNETICALLY QUANTIZED 2-DIMENSIONAL ELECTRON GASES, Physical review. B, Condensed matter, 53(12), 1996, pp. 7945-7948

POLARIZATION MEMORY INDUCED BY POLARIZED LIGHT-ASSISTED ANODIZATION OF N-TYPE SI

Authors: POLISSKI G ANDRIANOV AV KOVALEV D KOCH F

Citation: G. Polisski et al., POLARIZATION MEMORY INDUCED BY POLARIZED LIGHT-ASSISTED ANODIZATION OF N-TYPE SI, Thin solid films, 276(1-2), 1996, pp. 235-237

PHOTOLUMINESCENCE STUDIES OF CURRENT-INDUCED NONEQUILIBRIUM POPULATION IN MAGNETICALLY QUANTIZED 2-DIMENSIONAL ELECTRON GASES

Authors: ZINOVEV NN ANDRIANOV AV CHALLIS LJ FOXON CT HARRIS JJ

Citation: Nn. Zinovev et al., PHOTOLUMINESCENCE STUDIES OF CURRENT-INDUCED NONEQUILIBRIUM POPULATION IN MAGNETICALLY QUANTIZED 2-DIMENSIONAL ELECTRON GASES, Surface science, 362(1-3), 1996, pp. 392-396

CUGEO3 - AN ATTEMPT OF GRUNEISEN ANALYSIS

Authors: ANDRIANOV AV

Citation: Av. Andrianov, CUGEO3 - AN ATTEMPT OF GRUNEISEN ANALYSIS, Czechoslovak journal of Physics, 46, 1996, pp. 1961-1962

ELECTROLUMINESCENCE KINETICS AND SPECTRUM OF POROUS-SILICON METAL STRUCTURES/

Authors: AVERBUKH BY ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID

Citation: By. Averbukh et al., ELECTROLUMINESCENCE KINETICS AND SPECTRUM OF POROUS-SILICON METAL STRUCTURES/, Semiconductors, 29(4), 1995, pp. 327-330

PRODUCTION AND STUDY OF POROUS SILICON IN POWDERED FORM

Authors: ANDRIANOV AV BELYAKOV LV GORYACHEV DN SRESELI OM YAROSHETSKII ID

Citation: Av. Andrianov et al., PRODUCTION AND STUDY OF POROUS SILICON IN POWDERED FORM, Semiconductors, 29(4), 1995, pp. 381-384

HELICAL MAGNETIC-STRUCTURES IN HEAVY RARE-EARTH-METALS AS A PROBABLE MANIFESTATION OF THE ELECTRONIC TOPOLOGICAL TRANSITION

Authors: ANDRIANOV AV

Citation: Av. Andrianov, HELICAL MAGNETIC-STRUCTURES IN HEAVY RARE-EARTH-METALS AS A PROBABLE MANIFESTATION OF THE ELECTRONIC TOPOLOGICAL TRANSITION, Journal of magnetism and magnetic materials, 144, 1995, pp. 749-750

PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES

Authors: ZINOVEV NN ANDRIANOV AV AVERBUKH BY YAROSHETSKII ID CHENG TS JENKINS LC HOOPER SE FOXON CT ORTON JW

Citation: Nn. Zinovev et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING FROM GAN LAYERS GROWN ON GAAS AND GAP SUBSTRATES, Semiconductor science and technology, 10(8), 1995, pp. 1117-1121

ENHANCED RAMAN-SCATTERING IN POROUS SILICON

Authors: ANDRIANOV AV BELYAKOV LV GORYACHEV DN KOVALEV DI SRESELI OM YAROSHETSKII ID AVERBUKH BY

Citation: Av. Andrianov et al., ENHANCED RAMAN-SCATTERING IN POROUS SILICON, Semiconductors, 28(12), 1994, pp. 1213-1215

TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON

Authors: ANDRIANOV AV KOVALEV DI SHUMAN VB YAROSHETSKII ID

Citation: Av. Andrianov et al., TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 27(1), 1993, pp. 71-73

POLARIZED PHOTOLUMINESCENCE OF POROUS SIL ICON

Authors: ANDRIANOV AV KOVALEV DI YAROSHETSKII ID

Citation: Av. Andrianov et al., POLARIZED PHOTOLUMINESCENCE OF POROUS SIL ICON, Fizika tverdogo tela, 35(10), 1993, pp. 2677-2683

OGILVIES-SYNDROME

Authors: ANDRIANOV AV LEBEDEV SY

Citation: Av. Andrianov et Sy. Lebedev, OGILVIES-SYNDROME, Hirurgia, (11), 1993, pp. 50-55

ANOMALOUS PHOTOLUMINESCENCE POLARIZATION OF POROUS SILICON

Authors: ANDRIANOV AV KOVALEV DI ZINOVEV NN YAROSHETSKII ID

Citation: Av. Andrianov et al., ANOMALOUS PHOTOLUMINESCENCE POLARIZATION OF POROUS SILICON, JETP letters, 58(6), 1993, pp. 427-430

ANALOGS OF THE MARKOV AND BERNSTEIN INEQUALITIES FOR POLYNOMIALS IN BANACH-SPACES

Authors: ANDRIANOV AV

Citation: Av. Andrianov, ANALOGS OF THE MARKOV AND BERNSTEIN INEQUALITIES FOR POLYNOMIALS IN BANACH-SPACES, Mathematical notes, 52(5-6), 1992, pp. 1088-1093

Risultati: 1-25 |