Authors: KHLYAP GM ANDRUKHIV MG BLASHKIV VS BOCHKAREVA LV NIMETSKII VP

Citation: Gm. Khlyap et al., PHOTOELECTRIC AND EMISSIVE PROPERTIES OF HETEROSTRUCTURES BASED ON LEAD SULFIDE AND II-VI COMPOUNDS, Inorganic materials, 30(5), 1994, pp. 574-576

Authors: ANDRUKHIV MG BELOTELOV SV VIRT IS

Citation: Mg. Andrukhiv et al., TRANSIENT PROCESSES IN N-P STRUCTURES MADE OF CDXHG1-XTE(), Semiconductors, 27(11-12), 1993, pp. 1026-1027

Authors: ANDRUKHIV MG GRIGOROVICH GM TSYUTSYURA DI SHKUMBATYUK PS

Citation: Mg. Andrukhiv et al., ON FORMATION AND BEHAVIOR OF DEFECTS IN C DTE(IN) UNDER THE EFFECT OFCO2-LASER RADIATION, UKRAINSKII FIZICHESKII ZHURNAL, 38(11), 1993, pp. 1695-1697

Authors: KHLYAP GM ANDRUKHIV MG SHKUMBATIUK PS BOCHKARIOVA LV

Citation: Gm. Khlyap et al., CHARACTERISTICS OF HG0.8CD0.2TE PBS HETEROSTRUCTURES/, Journal of applied physics, 74(8), 1993, pp. 5288-5289

Authors: KHLYAP GM ANDRUKHIV MG BOCHKAREVA LV VIRT IS SHKUMBATYUK PS

Citation: Gm. Khlyap et al., PHYSICAL-PROPERTIES OF HG1-XCDXTE PBS HETEROJUNCTIONS/, Inorganic materials, 29(5), 1993, pp. 828-830