Authors: TAN LS LAU WS SAMUDRA GS LEE KM ANG BY

Citation: Ls. Tan et al., NUMERICAL-SIMULATION F BACKGATING SUPPRESSION IN HIGH-ELECTRON-MOBILITY TRANSISTORS (HEMTS) WITH A LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY (MBE)-GROWN GALLIUM-ARSENIDE BUFFER LAYER BETWEEN THE SUBSTRATE AND ACTIVE LAYERS, JPN J A P 2, 33(6B), 1994, pp. 120000826-120000829