Authors: ANGELIS CT DIMITRIADIS CA SAMARAS I BRINI J KAMARINOS G GUEORGUIEV VK IVANOV TE

Citation: Ct. Angelis et al., STUDY OF LEAKAGE CURRENT IN N-CHANNEL AND P-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY CONDUCTION AND LOW-FREQUENCY NOISE MEASUREMENTS, Journal of applied physics, 82(8), 1997, pp. 4095-4101