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Results: 51-75/77
Authors:
ABID H
BADI N
DRIZ M
BOUARISSA N
BENKABOU KH
KHELIFA B
AOURAG H
Citation: H. Abid et al., ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOY GAXIN1-XASYP1-Y, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 133-139
Authors:
SEKKAL N
AOURAG H
AMRANE N
SOUDINI B
Citation: N. Sekkal et al., RESONANT-TUNNELING EFFECT THROUGH A PARABOLIC QUANTUM-WELL, Physica. B, Condensed matter, 215(2-3), 1995, pp. 171-177
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, CONDUCTION-BAND EDGE CHARGE-DENSITIES IN INXGA1-XSB, Physica status solidi. b, Basic research, 190(1), 1995, pp. 227-239
Authors:
AOURAG H
ABDERRAHMANE SA
AMRANE N
AMRANE N
BOUARISSA N
Citation: H. Aourag et al., ELECTRONIC AND POSITRONIC STRUCTURE OF DIAMOND UNDER NORMAL AND HIGH-PRESSURE, Physica status solidi. b, Basic research, 189(2), 1995, pp. 417-432
Authors:
ZAOUI A
BOUHAFS B
FERHAT M
AOURAG H
Citation: A. Zaoui et al., PREDICTION OF HIGH-PRESSURE PHASE-TRANSITION IN AL COMPOUNDS BY THE IONICITY CHARACTER, Physica status solidi. b, Basic research, 189(1), 1995, pp. 5-8
Authors:
ALKHAFAJI ST
AMRANE N
BOUARISSA N
BADI N
SOUDINI B
SEHIL M
AOURAG H
Citation: St. Alkhafaji et al., PRESSURE-DEPENDENCE OF ELECTRON AND POSITRON BAND STRUCTURES IN ELEMENTAL SEMICONDUCTORS, Physica status solidi. b, Basic research, 189(1), 1995, pp. 139-151
Authors:
BOUARISSA N
WEST RN
AOURAG H
Citation: N. Bouarissa et al., POSITRON-ANNIHILATION IN NARROW-GAP SEMICONDUCTORS, Physica status solidi. b, Basic research, 188(2), 1995, pp. 723-734
Authors:
KALAI H
KHELIFA B
BADI N
ABID H
AMRANE N
SOUDINI B
AOURAG H
Citation: H. Kalai et al., CORRELATION BETWEEN HIGH-PRESSURE EFFECTS AND ALLOYING IN GAP AND ALP, Materials chemistry and physics, 39(3), 1995, pp. 180-184
Authors:
BOUARISSA N
KOBAYASI T
NARA H
AOURAG H
Citation: N. Bouarissa et al., PRESSURE-DEPENDENCE OF POSITRON-ANNIHILATION IN GERMANIUM, Solid state communications, 96(9), 1995, pp. 689-695
Authors:
BOUHAFS B
AOURAG H
Citation: B. Bouhafs et H. Aourag, PREDICTED MODIFICATIONS IN THE DIRECT AND INDIRECT GAPS OF SI, Solid state communications, 96(4), 1995, pp. 245-250
Authors:
SOUDINI B
AMRANE N
BADI N
KHELIFA B
AOURAG H
Citation: B. Soudini et al., POSITRON-ANNIHILATION STUDIES IN GAXIN1-XAS, Solid state communications, 96(12), 1995, pp. 987-991
Authors:
DRISSKHODJA F
ABID H
KHELIFA B
AMRANE N
SOUDINI B
DRIZ M
BADI N
AOURAG H
Citation: F. Drisskhodja et al., ELECTRONIC-STRUCTURE OF THE PSEUDOBINARY SEMICONDUCTOR ALLOY GAXAL1-XSB, Materials science & engineering. B, Solid-state materials for advanced technology, 27(2-3), 1994, pp. 93-97
Authors:
DRIZ M
AOURAG H
ABID H
KHELIFA B
BADI N
Citation: M. Driz et al., THE PSEUDOBINARY ALLOY (GA, AL)AS UNDER HYDROSTATIC-PRESSURE, Materials science & engineering. B, Solid-state materials for advanced technology, 25(2-3), 1994, pp. 159-165
Authors:
BADI N
AMRANE N
ABID H
DRIZ M
SOUDINI B
KHELIFA B
AOURAG H
Citation: N. Badi et al., PRESSURE-DEPENDENT PROPERTIES OF BORON PHOSPHIDE, Physica status solidi. b, Basic research, 185(2), 1994, pp. 379-388
Authors:
ZAOUI A
FERHAT M
KHELIFA B
DUFOUR JP
AOURAG H
Citation: A. Zaoui et al., CORRELATION BETWEEN THE IONICITY CHARACTER AND THE CHARGE-DENSITY IN SEMICONDUCTORS, Physica status solidi. b, Basic research, 185(1), 1994, pp. 163-169
Authors:
BENKABOU F
DUFOUR JP
SOUDINI B
AMRANE N
KHELIFA B
AOURAG H
Citation: F. Benkabou et al., PRESSURE-DEPENDENCE OF POSITRON-ANNIHILATION IN SI, Physica status solidi. b, Basic research, 184(2), 1994, pp. 355-363
Authors:
BADI N
ABID H
SOUDINI B
AMRANE N
DRIZ M
DUFOUR JP
AOURAG H
KHELIFA B
Citation: N. Badi et al., THE UNIAXIAL STRAIN EFFECT ON THE TERNARY ALLOY SEMICONDUCTOR GA1-XALXP, Physica status solidi. b, Basic research, 184(2), 1994, pp. 365-372
Authors:
BENKABOU F
BADI N
DUFOUR JP
KOBAYASI T
NARA H
KHELIFA B
AOURAG H
Citation: F. Benkabou et al., PRESSURE-DEPENDENCE OF THE BAND-GAPS AND CHARGE-DENSITIES IN SI, Physica status solidi. b, Basic research, 182(1), 1994, pp. 109-117
Authors:
AOURAG H
DJELOULI B
HAZZAB A
KHELIFA B
Citation: H. Aourag et al., PSEUDOPOTENTIAL CALCULATIONS ON 3C-SIC, Materials chemistry and physics, 39(1), 1994, pp. 34-39
Authors:
AOURAG H
BENKABOU F
ABBAR B
AITABDERAHMANE S
DUFOUR JP
KHELIFA B
Citation: H. Aourag et al., PRESSURE-DEPENDENCE OF POSITRON DISTRIBUTION IN SI, Materials chemistry and physics, 38(4), 1994, pp. 348-354
Authors:
BADI N
ABID H
SOUDINI B
AMRANE N
DRIZ M
KHELIFA B
AOURAG H
Citation: N. Badi et al., VALENCE AND CONDUCTION BAND-EDGES-CHARGE DENSITIES IN GA1-XALXP MIXED-CRYSTALS, Materials chemistry and physics, 38(3), 1994, pp. 243-249
Authors:
ABID H
BADI N
SOUDINI B
AMRANE N
DRIZ M
HAMMADI M
AOURAG H
KHELIFA B
Citation: H. Abid et al., PRESSURE-DEPENDENCE OF BAND-GAPS IN GAAS, GAP, INP, AND INAS, Materials chemistry and physics, 38(2), 1994, pp. 162-168
Authors:
SOUDINI B
AOURAG H
AMRANE N
SEHIL M
BOUSSAHLA Z
SELLAL F
KHELIFA B
MAHMOUDI A
Citation: B. Soudini et al., POSITRON AFFINITY OF GAXIN1-XAS AS A FUNCTION OF THE MOLE FRACTION, Materials chemistry and physics, 36(3-4), 1994, pp. 271-275
Authors:
FERHAT M
ZAOUI A
KHELIFA B
AOURAG H
Citation: M. Ferhat et al., BAND-STRUCTURE CALCULATIONS OF GEXSI1-X, Solid state communications, 91(5), 1994, pp. 407-411
Authors:
AOURAG H
DRIZ M
KHELIFA B
NARA H
KOBAYASI T
Citation: H. Aourag et al., THE WEAKNESS OF THE ADJUSTMENT OF THE PSEUDOPOTENTIAL FORM-FACTORS, Materials chemistry and physics, 36(1-2), 1993, pp. 77-79