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Results:
1-24
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Results: 24
Authors:
KARDAR AH
ARAFA M
ALSUHAIBANI H
PETTERSSON BA
LINDSTEDT E
HANASH KA
HUSSAIN S
Citation: Ah. Kardar et al., FEASIBILITY OF ADRENALECTOMY WITH RADICAL NEPHRECTOMY, Urology, 52(1), 1998, pp. 35-37
Authors:
MAHAJAN A
ARAFA M
FAY P
CANEAU C
ADESIDA I
Citation: A. Mahajan et al., ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS (E-HEMTS) LATTICE-MATCHED TO INP, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2422-2429
Authors:
ARAFA M
WOHLMUTH WA
FAY P
ADESIDA I
Citation: M. Arafa et al., EFFECT OF DIFFRACTION AND INTERFERENCE IN SUBMICRON METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 62-67
Authors:
MAHAJAN A
FAY P
ARAFA M
ADESIDA I
Citation: A. Mahajan et al., INTEGRATION OF INALAS INGAAS/INP ENHANCEMENT-MODE AND DEPLETION-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS FOR HIGH-SPEED CIRCUIT APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 338-340
Authors:
WOHLMUTH W
ARAFA M
FAY P
SEO JW
ADESIDA I
Citation: W. Wohlmuth et al., IMPULSE-RESPONSE OF METAL-SEMICONDUCTOR-METAL PHOTODETECTORS USING A CONFORMAL MAPPING TECHNIQUE AND EXTRACTED CIRCUIT PARAMETERS, JPN J A P 1, 36(2), 1997, pp. 652-656
Authors:
ISMAIL K
CHU JO
ARAFA M
Citation: K. Ismail et al., INTEGRATED ENHANCEMENT-MODE AND DEPLETION-MODE FET IN MODULATION-DOPED SI SIGE HETEROSTRUCTURES/, IEEE electron device letters, 18(9), 1997, pp. 435-437
Authors:
MAHAJAN A
CUEVA G
ARAFA M
FAY P
ADESIDA I
Citation: A. Mahajan et al., FABRICATION AND CHARACTERIZATION OF AN INALAS INGAAS/INP RING OSCILLATOR USING INTEGRATED ENHANCEMENT-MODE AND DEPLETION-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS/, IEEE electron device letters, 18(8), 1997, pp. 391-393
Authors:
MAHAJAN A
ARAFA M
FAY P
CANEAU C
ADESIDA I
Citation: A. Mahajan et al., 0.3-MU-M GATE-LENGTH ENHANCEMENT-MODE INALAS INGAAS/INP HIGH-ELECTRON-MOBILITY TRANSISTOR/, IEEE electron device letters, 18(6), 1997, pp. 284-286
Authors:
FAY P
ARAFA M
WOHLMUTH WA
CANEAU C
CHANDRASEKHAR S
ADESIDA I
Citation: P. Fay et al., DESIGN, FABRICATION, AND PERFORMANCE OF HIGH-SPEED MONOLITHICALLY INTEGRATED INALAS INGAAS/INP MSM/HEMT PHOTORECEIVERS/, Journal of lightwave technology, 15(10), 1997, pp. 1871-1879
Authors:
ADESIDA I
ARAFA M
ISMAIL K
CHU JO
MEYERSON BS
Citation: I. Adesida et al., SUBMICROMETER P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED APPLICATIONS, Microelectronic engineering, 35(1-4), 1997, pp. 257-260
Authors:
WOHLMUTH W
ARAFA M
FAY P
ADESIDA I
Citation: W. Wohlmuth et al., INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH A HYBRID COMBINATION OF TRANSPARENT AND OPAQUE ELECTRODES, Applied physics letters, 70(22), 1997, pp. 3026-3028
Authors:
ARAFA M
FAY P
ISMAIL K
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., DC AND RF PERFORMANCE OF 0.25 MU-M P-TYPE SIGE MODFET, IEEE electron device letters, 17(9), 1996, pp. 449-451
Authors:
ARAFA M
FAY P
ISMAIL K
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., HIGH-SPEED P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, IEEE electron device letters, 17(3), 1996, pp. 124-126
Authors:
ARAFA M
ISMAIL K
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., A 70-GHZ F(T) LOW OPERATING BIAS SELF-ALIGNED P-TYPE SIGE MODFET, IEEE electron device letters, 17(12), 1996, pp. 586-588
Authors:
WOHLMUTH WA
ARAFA M
MAHAJAN A
FAY P
ADESIDA I
Citation: Wa. Wohlmuth et al., INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH ENGINEERED SCHOTTKY-BARRIER HEIGHTS, Applied physics letters, 69(23), 1996, pp. 3578-3580
Authors:
ALSHAMMARI SA
KHOJA TA
ARAFA M
ALYAMANI MJMS
Citation: Sa. Alshammari et al., AN APPRAISAL OF HYPERTENSIVE PATIENTS CARE IN PRIMARY HEALTH CENTERS IN RIYADH REGION, SAUDI-ARABIA, Medical science research, 23(9), 1995, pp. 645-648
Authors:
ARAFA M
ISMAIL K
FAY P
CHU JO
MEYERSON BS
ADESIDA I
Citation: M. Arafa et al., HIGH-TRANSCONDUCTANCE P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTOR, Electronics Letters, 31(8), 1995, pp. 680-681
Authors:
ISMAIL K
ARAFA M
SAENGER KL
CHU JO
MEYERSON BS
Citation: K. Ismail et al., EXTREMELY HIGH-ELECTRON-MOBILITY IN SI SIGE MODULATION-DOPED HETEROSTRUCTURES/, Applied physics letters, 66(9), 1995, pp. 1077-1079
Authors:
ISMAIL K
ARAFA M
STERN F
CHU JO
MEYERSON BS
Citation: K. Ismail et al., GATED HALL-EFFECT MEASUREMENTS IN HIGH-MOBILITY N-TYPE SI SIGE MODULATION-DOPED HETEROSTRUCTURES/, Applied physics letters, 66(7), 1995, pp. 842-844
Authors:
ARAFA M
YOUTSEY C
GRUNDBACHER R
ADESIDA I
KLEM J
Citation: M. Arafa et al., FABRICATION OF NANOSTRUCTURES IN ALGASB INAS USING ELECTRON-BEAM LITHOGRAPHY AND CHEMICALLY ASSISTED ION-BEAM ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3623-3625
Authors:
MOHAMADIYEH M
ARAFA M
ELDESOUKI M
Citation: M. Mohamadiyeh et al., ASSESSMENT OF MYOCARDIAL PERFUSION WITH SINGLE-PHOTON EMISSION TOMOGRAPHY, Annals of saudi medicine, 14(2), 1994, pp. 97-101
Authors:
ALNOZHA M
GADER AMA
ALMOMEN AK
NOAH MS
JAWAID M
ARAFA M
Citation: M. Alnozha et al., HEMOSTATIC VARIABLES IN PATIENTS WITH UNSTABLE ANGINA, International journal of cardiology, 43(3), 1994, pp. 269-277
Authors:
ISMAIL K
LEGOUES FK
SAENGER KL
ARAFA M
CHU JO
MOONEY PM
MEYERSON BS
Citation: K. Ismail et al., IDENTIFICATION OF A MOBILITY-LIMITING SCATTERING MECHANISM IN MODULATION-DOPED SI SIGE HETEROSTRUCTURES/, Physical review letters, 73(25), 1994, pp. 3447-3450
Authors:
ALNOZHA M
GADER AMA
NOAH MS
JAWAID M
ALMOMEN AK
ARAFA M
Citation: M. Alnozha et al., HEMOSTATIC VARIABLES IN PATIENTS WITH UNSTABLE ANGINA, Thrombosis and haemostasis, 69(6), 1993, pp. 816-816
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