Authors:
YOSHIMI M
TERAUCHI M
NISHIYAMA A
ARISUMI O
MURAKOSHI AR
MATSUZAWA K
SHIGYO N
TAKENO S
TOMITA M
SUZUKI K
USHIKU Y
TANGO H
Citation: M. Yoshimi et al., SUPPRESSION OF THE FLOATING-BODY EFFECT IN SOI MOSFETS BY THE BANDGAPENGINEERING METHOD USING A SI1-XGEX SOURCE STRUCTURE, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 423-430
Citation: A. Nishiyama et al., SUPPRESSION OF THE FLOATING-BODY EFFECT IN PARTIALLY-DEPLETED SOI MOSFETS WITH SIGE SOURCE STRUCTURE AND ITS MECHANISM, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2187-2192
Authors:
NISHIYAMA A
ARISUMI O
TERAUCHI M
TAKENO S
SUZUKI K
TAKAKUWA C
YOSHIMI M
Citation: A. Nishiyama et al., FORMATION OF SIGE SOURCE DRAIN USING GE IMPLANTATION FOR FLOATING-BODY EFFECT RESISTANT SOI MOSFETS, JPN J A P 1, 35(2B), 1996, pp. 954-959
Authors:
ARISUMI O
MATSUZAWA K
SHIGYO N
TERAUCHI M
NISHIYAMA A
YOSHIMI M
Citation: O. Arisumi et al., ANALYSIS OF SI-GE SOURCE STRUCTURE IN 0.15 MU-M SOI MOSFETS USING 2-DIMENSIONAL DEVICE SIMULATION, JPN J A P 1, 35(2B), 1996, pp. 992-995