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Authors: NISHIYAMA A ARISUMI O YOSHIMI M

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Authors: NISHIYAMA A ARISUMI O TERAUCHI M TAKENO S SUZUKI K TAKAKUWA C YOSHIMI M

Citation: A. Nishiyama et al., FORMATION OF SIGE SOURCE DRAIN USING GE IMPLANTATION FOR FLOATING-BODY EFFECT RESISTANT SOI MOSFETS, JPN J A P 1, 35(2B), 1996, pp. 954-959

Authors: ARISUMI O MATSUZAWA K SHIGYO N TERAUCHI M NISHIYAMA A YOSHIMI M

Citation: O. Arisumi et al., ANALYSIS OF SI-GE SOURCE STRUCTURE IN 0.15 MU-M SOI MOSFETS USING 2-DIMENSIONAL DEVICE SIMULATION, JPN J A P 1, 35(2B), 1996, pp. 992-995