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Results: 1-9 |
Results: 9
GROWTH OF EPITAXIAL CO LAYERS ON SB-PASSIVATED GAAS(110) SUBSTRATES
Authors: TEODORESCU CM CHROST J ASCOLANI H AVILA J SORIA F ASENSIO MC
Citation: Cm. Teodorescu et al., GROWTH OF EPITAXIAL CO LAYERS ON SB-PASSIVATED GAAS(110) SUBSTRATES, Surface review and letters, 5(1), 1998, pp. 279-283
SB ON GAAS(110) STRUCTURE STUDIED BY DIRECT-METHODS AND CHEMICAL-SHIFT PHOTOELECTRON DIFFRACTION
Authors: ASCOLANI H AVILA J FRANCO N ASENSIO MC
Citation: H. Ascolani et al., SB ON GAAS(110) STRUCTURE STUDIED BY DIRECT-METHODS AND CHEMICAL-SHIFT PHOTOELECTRON DIFFRACTION, Applied surface science, 123, 1998, pp. 223-227
DIRECT DETERMINATION OF MULTIPLE ADSORPTION SITES USING CHEMICAL-SHIFT PHOTOELECTRON DIFFRACTION - SB GAAS(110)/
Authors: ASCOLANI H AVILA J FRANCO N ASENSIO MC
Citation: H. Ascolani et al., DIRECT DETERMINATION OF MULTIPLE ADSORPTION SITES USING CHEMICAL-SHIFT PHOTOELECTRON DIFFRACTION - SB GAAS(110)/, Physical review letters, 78(13), 1997, pp. 2604-2607
MORPHOLOGY OF THIN SB LAYERS GROWN ON SI(111)7X7 AT ROOM-TEMPERATURE
Authors: CUBERES MT ASCOLANI H MORENO M SACEDON JL
Citation: Mt. Cuberes et al., MORPHOLOGY OF THIN SB LAYERS GROWN ON SI(111)7X7 AT ROOM-TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1655-1659
EXCITATION OF PHONONS AND FORWARD FOCUSING IN X-RAY PHOTOEMISSION FROM THE VALENCE-BAND
Authors: ALVAREZ MAV ASCOLANI H ZAMPIERI G
Citation: Mav. Alvarez et al., EXCITATION OF PHONONS AND FORWARD FOCUSING IN X-RAY PHOTOEMISSION FROM THE VALENCE-BAND, Physical review. B, Condensed matter, 54(20), 1996, pp. 14703-14712
EXCITATION OF PHONONS IN MEDIUM-ENERGY ELECTRON-DIFFRACTION
Authors: ALVAREZ MAV ASCOLANI H ZAMPIERI G
Citation: Mav. Alvarez et al., EXCITATION OF PHONONS IN MEDIUM-ENERGY ELECTRON-DIFFRACTION, Physical review. B, Condensed matter, 53(11), 1996, pp. 7524-7534
DETECTING STACKING-FAULTS DURING EPITAXIAL-GROWTH BY LOW-ENERGY-ELECTRON DIFFRACTION
Authors: ASCOLANI H CERDA JR DEANDRES PL DEMIGUEL JJ MIRANDA R HEINZ K
Citation: H. Ascolani et al., DETECTING STACKING-FAULTS DURING EPITAXIAL-GROWTH BY LOW-ENERGY-ELECTRON DIFFRACTION, Surface science, 345(3), 1996, pp. 320-330
ELECTRONIC-STRUCTURE OF AMORPHOUS SI-N COMPOUNDS
Authors: GURAYA MM ASCOLANI H ZAMPIERI G DASILVA JHD CANTAO MP CISNEROS JI
Citation: Mm. Guraya et al., ELECTRONIC-STRUCTURE OF AMORPHOUS SI-N COMPOUNDS, Physical review. B, Condensed matter, 49(19), 1994, pp. 13446-13451
ELECTRONIC-STRUCTURE OF AMORPHOUS SI-N COMPOUNDS
Authors: GURAYA MM ASCOLANI H ZAMPIERI G DASILVA JHD CANTAO MP CISNEROS JI
Citation: Mm. Guraya et al., ELECTRONIC-STRUCTURE OF AMORPHOUS SI-N COMPOUNDS, Journal of physics. Condensed matter, 5, 1993, pp. 309-310
Risultati: 1-9 |