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Citation: Zt. Jiang et al., THE APPLICATION OF SILICON RICH NITRIDE FILMS FOR USE AS DEEP-ULTRAVIOLET LITHOGRAPHY PHASE-SHIFTING MASKS, JPN J A P 1, 37(2), 1998, pp. 571-576

Authors: ASINOVSKY L SHEN F YAMAGUCHI T

Citation: L. Asinovsky et al., CHARACTERIZATION OF THE OPTICAL-PROPERTIES OF PECVD SINX, FILMS USINGELLIPSOMETRY AND REFLECTOMETRY, Thin solid films, 313, 1998, pp. 198-204

Authors: ASINOVSKY L SCHROTH M SHEN F SWEENEY JJ

Citation: L. Asinovsky et al., CHARACTERIZATION AND METROLOGY OF THE DIFFUSION DOPED POLYSILICON USING ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 248-253

Authors: JIANG ZT YAMAGUCHI T AOYAMA M NAKANISHI Y ASINOVSKY L

Citation: Zt. Jiang et al., SPECTROELLIPSOMETRIC CHARACTERIZATION OF THIN SILICON-NITRIDE FILMS, Thin solid films, 313, 1998, pp. 298-302

Authors: ASINOVSKY L FRISA LE

Citation: L. Asinovsky et Le. Frisa, CHARACTERIZATION OF PVD TIN UNIFORMITY, Thin solid films, 313, 1998, pp. 303-307

Authors: ASINOVSKY L FRISA LE

Citation: L. Asinovsky et Le. Frisa, CONTROL OF PVD TIN THICKNESS MEASUREMENTS, Microelectronic engineering, 37-8(1-4), 1997, pp. 427-432