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Citation: M. Barthula et al., Copper passivation of boron in Si1-xGex alloys and boron reactivation kinetics, MICROEL ENG, 55(1-4), 2001, pp. 323-328

Authors: Teng, CW Aboelfotoh, MO Davis, RF Muth, JF Kolbas, RM

Citation: Cw. Teng et al., Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers, APPL PHYS L, 78(12), 2001, pp. 1688-1690

Authors: Aboelfotoh, MO Borek, MA Narayan, J

Citation: Mo. Aboelfotoh et al., Microstructure and electrical resistivity of Cu and Cu3Ge thin films on Si1-xGex alloy layers, J APPL PHYS, 87(1), 2000, pp. 365-368

Authors: Aboelfotoh, MO Doyle, JP

Citation: Mo. Aboelfotoh et Jp. Doyle, Defect energy levels in electron-irradiated and deuterium-implanted 6H silicon carbide, PHYS REV B, 59(16), 1999, pp. 10823-10829

Authors: Aboelfotoh, MO Borek, MA Narayan, J

Citation: Mo. Aboelfotoh et al., Ohmic contact to p-type GaAs using Cu3Ge, APPL PHYS L, 75(25), 1999, pp. 3953-3955

Authors: Aboelfotoh, MO Borek, MA Narayan, J

Citation: Mo. Aboelfotoh et al., Interaction of Cu and Cu3Ge thin films with Si1-xGex alloys, APPL PHYS L, 75(12), 1999, pp. 1739-1741