Authors:
Abramov, VV
Acharya, BS
Akchurin, N
Atanasov, I
Baiatian, G
Ball, A
Banerjee, S
Banerjee, S
de Barbaro, P
Barnes, V
Bencze, G
Bodek, A
Booke, M
Budd, H
Cremaldi, L
Cushman, P
Dugad, SR
Dimitrov, L
Dyshkant, A
Elias, J
Evdokimov, VN
Fong, D
Freeman, J
Genchev, V
Goncharov, PI
Green, D
Gurtu, A
Hagopian, V
Iaydjiev, P
Korneev, Y
Krinitsyn, A
Krishnaswami, G
Krishnaswamy, MR
Kryshkin, V
Kunori, S
Laasanen, A
Lazic, D
Levchuk, L
Litov, L
Mondal, NK
Moulik, T
Narasimham, VS
Nemashkalo, A
Onel, Y
Petrov, P
Petukhov, Y
Piperov, S
Popov, V
Reidy, J
Ronzhin, A
Ruchti, R
Singh, JB
Shen, Q
Sirunyan, A
Skuja, A
Skup, E
Sorokin, P
Sudhakar, K
Summers, D
Szoncso, F
Tereshenko, SI
Timmermans, C
Tonwar, SC
Turchanovich, L
Tyukov, V
Volodko, A
Yukaev, A
Zaitchenko, A
Zatserklyaniy, A
Citation: Vv. Abramov et al., Studies of the response of the prototype CMS hadron calorimeter, includingmagnetic field effects, to pion, electron, and muon beams, NUCL INST A, 457(1-2), 2001, pp. 75-100
Citation: Vv. Abramov, A new scaling law for analyzing power in hadron production by transverselypolarized baryons, EUR PHY J C, 14(3), 2000, pp. 427-441
Authors:
Grebenshchikov, AY
Poveshchenko, AF
Abramov, VV
Kozlov, VA
Citation: Ay. Grebenshchikov et al., The expression of interleukin-1beta gene in brain hemispheres on the peripheral T-dependent and T-independent antigen injection, DOKL AKAD N, 366(5), 1999, pp. 712-714
Authors:
Pershenkov, VS
Cherepko, SV
Ivanov, RE
Shalnov, AV
Abramov, VV
Citation: Vs. Pershenkov et al., Single transistor technique for interface trap density measurement in irradiated MOS devices, MICROEL REL, 39(4), 1999, pp. 497-505