Authors:
Santucci, S
la Cecilia, AV
Phani, AR
Alfonsetti, R
Moccia, G
De Biase, M
Citation: S. Santucci et al., Use of x-ray reflectivity techniques to determine structural parameters ofsome silicide structures for microelectronics applications, APPL PHYS L, 76(1), 2000, pp. 52-54
Authors:
Santucci, S
Lozzi, L
Pacifico, D
Alfonsetti, R
Moccia, G
Citation: S. Santucci et al., Scanning Auger microscopy study of electromigration induced failure in submicrometric microelectronic devices, APPL SURF S, 145, 1999, pp. 329-333
Authors:
Santucci, S
Phani, AR
De Biase, M
Alfonsetti, R
Moccia, G
Terracciano, A
Missori, M
Citation: S. Santucci et al., Thickness dependence of C-54TiSi(2) phase formation in TiN/Ti/Si(100) thinfilm structures annealed in nitrogen ambient, J APPL PHYS, 86(8), 1999, pp. 4304-4311