Authors: Santucci, S Giuliani, P Picozzi, P Phani, AR De Biase, M Alfonsetti, R Moccia, G Missori, M

Citation: S. Santucci et al., X-ray reflectivity study on TiN/Ti/Si structures before and after annealing, THIN SOL FI, 360(1-2), 2000, pp. 89-95

Authors: Santucci, S la Cecilia, AV Phani, AR Alfonsetti, R Moccia, G De Biase, M

Citation: S. Santucci et al., Use of x-ray reflectivity techniques to determine structural parameters ofsome silicide structures for microelectronics applications, APPL PHYS L, 76(1), 2000, pp. 52-54

Authors: Santucci, S Lozzi, L Pacifico, D Alfonsetti, R Moccia, G

Citation: S. Santucci et al., Scanning Auger microscopy study of electromigration induced failure in submicrometric microelectronic devices, APPL SURF S, 145, 1999, pp. 329-333

Authors: Santucci, S Lozzi, L Passacantando, M Phani, AR Palumbo, E Bracchitta, G De Tommasis, R Torsi, A Alfonsetti, R Moccia, G

Citation: S. Santucci et al., Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2, J NON-CRYST, 245, 1999, pp. 224-231

Authors: Santucci, S Phani, AR De Biase, M Alfonsetti, R Moccia, G Terracciano, A Missori, M

Citation: S. Santucci et al., Thickness dependence of C-54TiSi(2) phase formation in TiN/Ti/Si(100) thinfilm structures annealed in nitrogen ambient, J APPL PHYS, 86(8), 1999, pp. 4304-4311