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Results:
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Results: 2
Progress in SiC: from material growth to commercial device development
Authors:
Carter, CH Tsvetkov, VF Glass, RC Henshall, D Brady, M Muller, SG Kordina, O Irvine, K Edmond, JA Kong, HS Singh, R Allen, ST Palmour, JW
Citation:
Ch. Carter et al., Progress in SiC: from material growth to commercial device development, MAT SCI E B, 61-2, 1999, pp. 1-8
High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
Authors:
Sheppard, ST Doverspike, K Pribble, WL Allen, ST Palmour, JW Kehias, LT Jenkins, TJ
Citation:
St. Sheppard et al., High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates, IEEE ELEC D, 20(4), 1999, pp. 161-163
Risultati:
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