Authors:
Zhang, W
Roesel, S
Alves, HR
Meister, D
Kriegseis, W
Hofmann, DM
Meyer, BK
Riemann, T
Veit, P
Blaesing, J
Krost, A
Christen, J
Citation: W. Zhang et al., Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation, APPL PHYS L, 78(6), 2001, pp. 772-774