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Results: 1-7 |
Results: 7
Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts
Authors: Dassonneville, S Amokrane, A Sieber, B Farvacque, JL Beaumont, B Gibart, P
Citation: S. Dassonneville et al., Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts, J APPL PHYS, 89(7), 2001, pp. 3736-3743
Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam
Authors: Dassonneville, S Amokrane, A Sieber, B Farvacque, JL Beaumont, B Gibart, P Ganiere, JD Leifer, K
Citation: S. Dassonneville et al., Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam, J APPL PHYS, 89(12), 2001, pp. 7966-7972
Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation
Authors: Amokrane, A Dassonneville, S Sieber, B Farvacque, JK Beaumont, B Bousquet, V Gibart, P Ganiere, JD Leifer, K
Citation: A. Amokrane et al., Defect diffusion and strain relaxation in epitaxial GaN laterally overgrown on (0001) sapphire under low energy electron beam irradiation, J PHYS-COND, 12(49), 2000, pp. 10271-10278
Experimental measurements of X-ray production cross-sections by protons ofenergies between 1 and 2.3 MeV and comparison with theoretical predictionsof PWBA and ECPSSR models
Authors: Ouziane, S Amokrane, A Zilabdi, M
Citation: S. Ouziane et al., Experimental measurements of X-ray production cross-sections by protons ofenergies between 1 and 2.3 MeV and comparison with theoretical predictionsof PWBA and ECPSSR models, NUCL INST B, 161, 2000, pp. 141-144
Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy
Authors: Amokrane, A Proix, F El Monkad, S Cricenti, A Barchesi, C Eddrief, M Amimer, K Sebenne, CA
Citation: A. Amokrane et al., Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy, J PHYS-COND, 11(22), 1999, pp. 4303-4315
Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire
Authors: Dassonneville, S Amokrane, A Sieber, B Farvacque, JL Beaumont, B Bousquet, V Gibart, P Leifer, K Ganiere, JD
Citation: S. Dassonneville et al., Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire, PHYSICA B, 274, 1999, pp. 148-151
A two-step method for epitaxial lateral overgrowth of GaN
Authors: Beaumont, B Bousquet, V Vennegues, P Vaille, M Bouille, A Gibart, P Dassonneville, S Amokrane, A Sieber, B
Citation: B. Beaumont et al., A two-step method for epitaxial lateral overgrowth of GaN, PHYS ST S-A, 176(1), 1999, pp. 567-571
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