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Amrouche, A
Imad, A
Mesmacque, G
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Authors:
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Smatti, A
Amrouche, A
Kechouane, M
Citation: B. Djezzar et al., Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET's devices at low gamma rays radiation doses, IEEE NUCL S, 47(6), 2000, pp. 1872-1878
Authors:
Djezzar, B
Amrouche, A
Smatti, A
Kachouane, M
Citation: B. Djezzar et al., Electrical characterization of oxide and Si/SiO2 interface of irradiated NMOS transistors at low radiation doses, IEEE NUCL S, 46(4), 1999, pp. 829-833