Citation: Jd. Albrecht et al., New materials-theory-based model for output characteristics of AlGaN/GaN heterostructure field effect transistors, MRS I J N S, 5, 2000, pp. NIL_550-NIL_555
Citation: Jd. Albrecht et al., AlGaN/GaN heterostructure field-effect transistor model including thermal effects, IEEE DEVICE, 47(11), 2000, pp. 2031-2036