Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Ang, KS
Wang, H
Ng, GI
Citation: Sf. Yoon et al., 0.25-mu m gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy, SOL ST ELEC, 43(4), 1999, pp. 785-789
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Ang, KS
Wang, H
Ng, GI
Citation: Sf. Yoon et al., Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy, MICROELEC J, 30(1), 1999, pp. 23-28
Citation: Rvvvj. Rao et al., Method for determining the source and drain resistance of double heterojunction delta-doped PHEMTs, ELECTR LETT, 35(14), 1999, pp. 1198-1200
Authors:
Ang, KS
Benarbia, S
Boulahrouz, R
Stanescu, C
Charasse, C
Le Cacheux, P
Simon, P
Citation: Ks. Ang et al., Hypertension in hemodialysis patients: a human model of salt sensitivity of blood pressure?, ARCH MAL C, 92(8), 1999, pp. 1023-1026