Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S de Peralta, LG Seryogin, GA Holtz, M Prokofyeva, TI Chu, SNG Zubrilov, AS Elyukhin, VA Nikitina, IP Nikolaev, A Melnik, Y Dmitriev, V Temkin, H

Citation: Sa. Nikishin et al., High quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, MRS I J N S, 5, 2000, pp. NIL_401-NIL_406

Authors: Nikishin, SA Faleev, NN Zubrilov, AS Antipov, VG Temkin, H

Citation: Sa. Nikishin et al., Growth of AlGaN on Si(111) by gas source molecular beam epitaxy, APPL PHYS L, 76(21), 2000, pp. 3028-3030

Authors: Nikishin, SA Antipov, VG Francoeur, S Faleev, NN Seryogin, GA Elyukhin, VA Temkin, H Prokofyeva, TI Holtz, M Konkar, A Zollner, S

Citation: Sa. Nikishin et al., High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia, APPL PHYS L, 75(4), 1999, pp. 484-486

Authors: Nikishin, SA Faleev, NN Antipov, VG Francoeur, S Grave de Peralta, L Seryogin, GA Temkin, H Prokofyeva, TI Holtz, M Chu, SNG

Citation: Sa. Nikishin et al., High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia, APPL PHYS L, 75(14), 1999, pp. 2073-2075