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Citation: Ts. Zheleva et al., Lateral epitaxy and dislocation density reduction in selectively grown GaNstructures, J CRYST GR, 222(4), 2001, pp. 706-718

Authors: Zheleva, TS Ashmawi, WM Jones, KA

Citation: Ts. Zheleva et al., Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis, PHYS ST S-A, 176(1), 1999, pp. 545-551

Authors: Zheleva, TS Ashmawi, WM Nam, OH Davis, RF

Citation: Ts. Zheleva et al., Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures, APPL PHYS L, 74(17), 1999, pp. 2492-2494