Authors:
Aurand, A
Leymarie, J
Vasson, A
Mesrine, M
Massies, J
Leroux, M
Citation: A. Aurand et al., Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces byphotoluminescence under pressure, J APPL PHYS, 89(7), 2001, pp. 3775-3782
Authors:
Aurand, A
Leymarie, J
Vasson, A
Vasson, AM
Mesrine, M
Deparis, C
Leroux, M
Citation: A. Aurand et al., Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy, THIN SOL FI, 336(1-2), 1998, pp. 358-361