Authors: Zhang, XG Rodriguez, A Li, P Jain, FC Ayers, JE

Citation: Xg. Zhang et al., A novel approach for the complete removal of threading dislocations from ZnSe on GaAs (001), J ELEC MAT, 30(6), 2001, pp. 667-672

Authors: Parent, DW Rodriguez, A Ayers, JE Jain, FC

Citation: Dw. Parent et al., The photoassisted MOVPE growth of ZnMgSSe, J CRYST GR, 224(3-4), 2001, pp. 212-217

Authors: Zhang, XG Parent, DW Li, P Rodriguez, A Zhao, G Ayers, JE Jain, FC

Citation: Xg. Zhang et al., X-ray rocking curve analysis of tetragonally distorted ternary semiconductors on mismatched (001) substrates, J VAC SCI B, 18(3), 2000, pp. 1375-1380

Authors: Parent, DW Rodriguez, A Li, P Zhang, XG Zhao, G Ayers, JE Jain, FC

Citation: Dw. Parent et al., The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan, J ELEC MAT, 29(6), 2000, pp. 713-717

Authors: Zhang, XG Rodriguez, A Wang, X Li, P Jain, FC Ayers, JE

Citation: Xg. Zhang et al., Complete removal of threading dislocations from mismatched layers by patterned heteroepitaxial processing, APPL PHYS L, 77(16), 2000, pp. 2524-2526

Authors: Zhang, XG Li, P Parent, DW Zhao, G Ayers, JE Jain, FC

Citation: Xg. Zhang et al., Comparison of X-ray diffraction methods for determination of the critical layer thickness for dislocation multiplication, J ELEC MAT, 28(5), 1999, pp. 553-558