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Results:
1-24
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Results: 24
Authors:
NARAYANAN V
SUKIDI N
HU CM
DIETZ N
BACHMANN KJ
MAHAJAN S
SHINGUBARA S
Citation: V. Narayanan et al., GROWTH OF GALLIUM-PHOSPHIDE LAYERS BY CHEMICAL BEAM EPITAXY ON OXIDE PATTERNED (001)SILICON SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 54(3), 1998, pp. 207-209
Authors:
BACHMANN KJ
SUKIDI N
HOPFNER C
HARRIS C
DIETZ N
TRAN HT
BEELER S
ITO K
BANKS HT
Citation: Kj. Bachmann et al., REAL-TIME MONITORING OF STEADY-STATE PULSED CHEMICAL BEAM EPITAXY BY P-POLARIZED REFLECTANCE, Journal of crystal growth, 183(3), 1998, pp. 323-337
Authors:
DIETZ N
SUKIDI N
HARRIS C
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME MONITORING OF SURFACE PROCESSES BY P-POLARIZED REFLECTANCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 807-815
Authors:
BACHMANN KJ
HOPFNER C
SUKIDI N
MILLER AE
HARRIS C
ASPNES DE
DIETZ NA
TRAN HT
BEELER S
ITO K
BANKS HT
ROSSOW U
Citation: Kj. Bachmann et al., MOLECULAR LAYER EPITAXY BY REAL-TIME OPTICAL PROCESS MONITORING, Applied surface science, 112, 1997, pp. 38-47
Authors:
BACHMANN KJ
ROSSOW U
SUKIDI N
CASTLEBERRY H
DIETZ N
Citation: Kj. Bachmann et al., HETEROEPITAXY OF GAP ON SI(100), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3019-3029
Authors:
ROSSOW U
DIETZ N
BACHMANN KJ
ASPNES DE
Citation: U. Rossow et al., OPTICAL INVESTIGATIONS OF SURFACE PROCESSES IN GAP HETEROEPITAXY ON SILICON UNDER PULSED CHEMICAL BEAM EPITAXY CONDITIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3040-3046
Authors:
BACHMANN KJ
Citation: Kj. Bachmann, THE CONTROL OF STOICHIOMETRY IN EPITAXIAL SEMICONDUCTOR STRUCTURES - INTERFACIAL CHEMISTRY-PROPERTY RELATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 41(3), 1996, pp. 352-356
Authors:
DIETZ N
ROSSOW U
ASPNES DE
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF HETEROEPITAXIAL GROWTH-PROCESSES ON SI UNDER PULSED CHEMICAL BEAM EPITAXY CONDITIONS, Applied surface science, 102, 1996, pp. 47-51
Authors:
DIETZ N
BACHMANN KJ
Citation: N. Dietz et Kj. Bachmann, P-POLARIZED REFLECTANCE SPECTROSCOPY - A HIGHLY SENSITIVE REAL-TIME MONITORING TECHNIQUE TO STUDY SURFACE KINETICS UNDER STEADY-STATE EPITAXIAL DEPOSITION CONDITIONS, Vacuum, 47(2), 1996, pp. 133-140
Authors:
DIETZ N
ROSSOW U
ASPNES DE
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF GAXIN1-XP AND GAP HETEROEPITAXY ON SIUNDER PULSED CHEMICAL BEAM CONDITIONS, Journal of crystal growth, 164(1-4), 1996, pp. 34-39
Authors:
BACHMANN KJ
ROSSOW U
DIETZ N
Citation: Kj. Bachmann et al., REAL-TIME MONITORING OF HETEROEPITAXIAL GROWTH-PROCESSES ON THE SILICON(001) SURFACE BY P-POLARIZED REFLECTANCE SPECTROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 472-478
Authors:
DIETZ N
BACHMANN KJ
Citation: N. Dietz et Kj. Bachmann, REAL-TIME MONITORING OF EPITAXIAL PROCESSES BY PARALLEL-POLARIZED REFLECTANCE SPECTROSCOPY, MRS bulletin, 20(5), 1995, pp. 49-55
Authors:
BACHMANN KJ
DIETZ N
MILLER AE
VENABLES D
KELLIHER JT
Citation: Kj. Bachmann et al., HETEROEPITAXY OF LATTICE-MATCHED COMPOUND SEMICONDUCTORS ON SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 696-704
Authors:
DIETZ N
MILLER A
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME MONITORING OF HOMOEPITAXIAL AND HETEROEPITAXIAL PROCESSES BY P-POLARIZED REFLECTANCE SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(1), 1995, pp. 153-155
Authors:
DIETZ N
ROSSOW U
ASPNES D
BACHMANN KJ
Citation: N. Dietz et al., REAL-TIME OPTICAL MONITORING OF EPITAXIAL-GROWTH - PULSED CHEMICAL BEAM EPITAXY OF GAP AND INP HOMOEPITAXY AND HETEROEPITAXY ON SI, Journal of electronic materials, 24(11), 1995, pp. 1571-1576
Authors:
KELLIHER JT
MILLER AE
DIETZ N
HABERMEHL S
CHEN YL
LU Z
LUCOVSKY G
BACHMANN KJ
Citation: Jt. Kelliher et al., INTERRUPTED CYCLE CHEMICAL BEAM EPITAXY OF GALLIUM-PHOSPHIDE ON SILICON WITH OR WITHOUT PHOTON ASSISTANCE, Applied surface science, 86(1-4), 1995, pp. 453-456
Authors:
DIETZ N
MILLER A
KELLIHER JT
VENABLES D
BACHMANN KJ
Citation: N. Dietz et al., MIGRATION-ENHANCED PULSED CHEMICAL BEAM EPITAXY OF GAP ON SI(001), Journal of crystal growth, 150(1-4), 1995, pp. 691-695
Authors:
XING GC
BACHMANN KJ
Citation: Gc. Xing et Kj. Bachmann, ZNGEP2 GAP MULTIPLE HETEROSTRUCTURES ON GAP SUBSTRATES/, Journal of crystal growth, 147(1-2), 1995, pp. 35-38
Authors:
LIU J
SON UT
STEPANOVA AN
CHRISTENSEN KN
WOJAK GJ
GIVARGIZOV EI
BACHMANN KJ
HREN JJ
Citation: J. Liu et al., MODIFICATION OF SI FIELD EMITTER SURFACES BY CHEMICAL CONVERSION TO SIC, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 717-721
Authors:
HABERMEHL S
DIETZ N
LU Z
BACHMANN KJ
LUCOVSKY G
Citation: S. Habermehl et al., HETEROEPITAXIAL GROWTH OF SI ON GAP AND GAAS-SURFACES BY REMOTE, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 990-994
Authors:
DIETZ N
TSVEYBAK I
RUDERMAN W
WOOD G
BACHMANN KJ
Citation: N. Dietz et al., NATIVE DEFECT RELATED OPTICAL-PROPERTIES OF ZNGEP2, Applied physics letters, 65(22), 1994, pp. 2759-2761
Authors:
BACHMANN KJ
XING GC
SCROGGS JS
TRAN HT
ITO K
CASTLEBERRY H
WOOD G
Citation: Kj. Bachmann et al., HETEROEPITAXY OF WIDE BANDGAP TERNARY SEMICONDUCTORS, JPN J A P 1, 32, 1993, pp. 133-138
Authors:
KELLIHER JT
THORNTON J
DIETZ N
LUCOVSKY G
BACHMANN KJ
Citation: Jt. Kelliher et al., LOW-TEMPERATURE CHEMICAL BEAM EPITAXY OF GALLIUM PHOSPHIDE SILICON HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 97-102
Authors:
CHOI SW
BACHMANN KJ
LUCOVSKY G
Citation: Sw. Choi et al., EPITAXIAL-GROWTH OF GAP BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(3), 1993, pp. 626-630
Risultati:
1-24
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