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Results: 1-25/41
Authors:
FERNANDEZ P
DALCORSO A
BALDERESCHI A
Citation: P. Fernandez et al., AB-INITIO STUDY OF THE DIELECTRIC-PROPERTIES OF SILICON AND GALLIUM-ARSENIDE USING POLARIZED WANNIER FUNCTIONS, Physical review. B, Condensed matter, 58(12), 1998, pp. 7480-7483
Authors:
FALL CJ
BINGGELI N
BALDERESCHI A
Citation: Cj. Fall et al., ANOMALY IN THE ANISOTROPY OF THE ALUMINUM WORK FUNCTION, Physical review. B, Condensed matter, 58(12), 1998, pp. 7544-7547
Authors:
DIVENTRA M
BALDERESCHI A
Citation: M. Diventra et A. Baldereschi, NEAR-BAND-EDGE RESONANT STATES OF ALAS MONOLAYERS EMBEDDED IN BULK GAAS - THE ROLE OF D SYMMETRIES, Physical review. B, Condensed matter, 57(7), 1998, pp. 3733-3736
Authors:
BITZ A
DIVENTRA M
BALDERESCHI A
STAEHLI JL
PIETAG F
GOTTSCHALCH V
RHAN H
SCHWABE R
Citation: A. Bitz et al., OPTICAL-PROPERTIES OF ULTRATHIN GAAS-LAYERS EMBEDDED IN ALXGA1-XAS, Physical review. B, Condensed matter, 57(4), 1998, pp. 2426-2430
Authors:
LAZZARINO M
SCAREL G
RUBINI S
BRATINA G
SORBA L
FRANCIOSI A
BERTHOD C
BINGGELI N
BALDERESCHI A
Citation: M. Lazzarino et al., ALZNSE(100) SCHOTTKY-BARRIER HEIGHT VERSUS INITIAL ZNSE SURFACE RECONSTRUCTION, Physical review. B, Condensed matter, 57(16), 1998, pp. 9431-9434
Authors:
BERTHOD C
BINGGELI N
BALDERESCHI A
Citation: C. Berthod et al., FORMATION ENERGY, LATTICE-RELAXATION, AND ELECTRONIC-STRUCTURE OF AL SI/GAAS(100) JUNCTIONS/, Physical review. B, Condensed matter, 57(16), 1998, pp. 9757-9762
Authors:
PERESSI M
BINGGELI N
BALDERESCHI A
Citation: M. Peressi et al., BAND ENGINEERING AT INTERFACES - THEORY AND NUMERICAL EXPERIMENTS, Journal of physics. D, Applied physics, 31(11), 1998, pp. 1273-1299
Authors:
PERESSI M
BALDERESCHI A
Citation: M. Peressi et A. Baldereschi, STRUCTURAL AND ELECTRONIC-PROPERTIES OF GA2SE3, Journal of applied physics, 83(6), 1998, pp. 3092-3095
Authors:
TINIVELLA U
PERESSI M
BALDERESCHI A
Citation: U. Tinivella et al., RANDOM PSEUDOBINARY IONIC ALLOYS - LATTICE ENERGY AND STRUCTURAL-PROPERTIES, Journal of physics. Condensed matter, 9(50), 1997, pp. 11141-11149
Authors:
MASSIDDA S
CONTINENZA A
POSTERNAK M
BALDERESCHI A
Citation: S. Massidda et al., SELF-ENERGY CORRECTIONS IN TRANSITION-METAL OXIDES, Physica. B, Condensed matter, 237, 1997, pp. 324-327
Authors:
DALCORSO A
BALDERESCHI A
Citation: A. Dalcorso et A. Baldereschi, AB-INITIO STUDY OF THE STRUCTURAL AND ELECTRONIC-PROPERTIES OF ADSORBATES - CO ON CU(001), Surface review and letters, 4(5), 1997, pp. 885-889
Authors:
DALCORSO A
PASQUARELLO A
BALDERESCHI A
Citation: A. Dalcorso et al., DENSITY-FUNCTIONAL PERTURBATION-THEORY FOR LATTICE-DYNAMICS WITH ULTRASOFT PSEUDOPOTENTIALS, Physical review. B, Condensed matter, 56(18), 1997, pp. 11369-11372
Authors:
FERNANDEZ P
DALCORSO A
BALDERESCHI A
MAURI F
Citation: P. Fernandez et al., FIRST-PRINCIPLES WANNIER FUNCTIONS OF SILICON AND GALLIUM-ARSENIDE, Physical review. B, Condensed matter, 55(4), 1997, pp. 1909-1913
Authors:
POSTERNAK M
BALDERESCHI A
KRAKAUER H
RESTA R
Citation: M. Posternak et al., NON-NOMINAL VALUE OF THE DYNAMICAL EFFECTIVE CHARGE IN ALKALINE-EARTHOXIDES, Physical review. B, Condensed matter, 55(24), 1997, pp. 15983-15986
Authors:
MASSIDDA S
CONTINENZA A
POSTERNAK M
BALDERESCHI A
Citation: S. Massidda et al., QUASI-PARTICLE ENERGY-BANDS OF TRANSITION-METAL OXIDES WITHIN A MODELGW SCHEME, Physical review. B, Condensed matter, 55(20), 1997, pp. 13494-13502
Authors:
FERRARA P
BINGGELI N
BALDERESCHI A
Citation: P. Ferrara et al., BAND DISCONTINUITIES IN ZINCBLENDE AND WURTZITE ALN SIC HETEROSTRUCTURES/, Physical review. B, Condensed matter, 55(12), 1997, pp. 7418-7421
Authors:
DIVENTRA M
PERESSI M
BALDERESCHI A
Citation: M. Diventra et al., ROLE OF STRUCTURAL AND CHEMICAL CONTRIBUTIONS TO VALENCE-BAND OFFSETSAT STRAINED-LAYER HETEROJUNCTIONS - THE GAAS GAP (001) CASE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2936-2939
Authors:
BERTHOD C
BARDI J
BINGGELI N
BALDERESCHI A
Citation: C. Berthod et al., SCHOTTKY-BARRIER TUNING AT AL GAAS(100) JUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3000-3007
Authors:
BERTHOD C
BINGGELI N
BALDERESCHI A
Citation: C. Berthod et al., LOCAL INTERFACE DIPOLES AND THE TUNING OF THE AL GAAS(100) SCHOTTKY-BARRIER HEIGHT WITH ULTRATHIN SI INTERLAYERS/, Europhysics letters, 36(1), 1996, pp. 67-72
Authors:
DIVENTRA M
PERESSI M
BALDERESCHI A
Citation: M. Diventra et al., CHEMICAL AND STRUCTURAL CONTRIBUTIONS TO THE VALENCE-BAND OFFSET AT GAP GAAS HETEROJUNCTIONS/, Physical review. B, Condensed matter, 54(8), 1996, pp. 5691-5695
Authors:
BARDI J
BINGGELI N
BALDERESCHI A
Citation: J. Bardi et al., PRESSURE AND ALLOY-COMPOSITION DEPENDENCE OF AL GA1-XALXAS(100) SCHOTTKY BARRIERS/, Physical review. B, Condensed matter, 54(16), 1996, pp. 11102-11105
Authors:
DALCORSO A
PASQUARELLO A
BALDERESCHI A
CAR R
Citation: A. Dalcorso et al., GENERALIZED-GRADIENT APPROXIMATIONS TO DENSITY-FUNCTIONAL THEORY - A COMPARATIVE-STUDY FOR ATOMS AND SOLIDS, Physical review. B, Condensed matter, 53(3), 1996, pp. 1180-1185
Authors:
DIVENTRA M
PAPP G
COLUZZA C
BALDERESCHI A
SCHULZ PA
Citation: M. Diventra et al., INDENTED BARRIER RESONANT-TUNNELING RECTIFIERS, Journal of applied physics, 80(7), 1996, pp. 4174-4176
Authors:
LAZZOUNI ME
PERESSI M
BALDERESCHI A
Citation: Me. Lazzouni et al., VALENCE-BAND OFFSET AT THE SI GAP(110) INTERFACE/, Applied physics letters, 68(1), 1996, pp. 75-77
Authors:
PAPP G
DIVENTRA M
COLUZZA C
BALDERESCHI A
MARGARITONDO G
Citation: G. Papp et al., CURRENT RECTIFICATION THROUGH A SINGLE-BARRIER RESONANT-TUNNELING QUANTUM STRUCTURE, Superlattices and microstructures, 17(3), 1995, pp. 273-275