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Results: 1-25/69
Authors:
VENKATARAGHAVAN P
BALIGA BJ
Citation: P. Venkataraghavan et Bj. Baliga, THE DV DT CAPABILITY OF MOS-GATED THYRISTORS, IEEE transactions on power electronics, 13(4), 1998, pp. 660-666
Authors:
SRIDEVAN S
BALIGA BJ
Citation: S. Sridevan et Bj. Baliga, LATERAL N-CHANNEL INVERSION MODE 4H-SIC MOSFETS, IEEE electron device letters, 19(7), 1998, pp. 228-230
Authors:
RAGHUNATHAN R
BALIGA BJ
Citation: R. Raghunathan et Bj. Baliga, P-TYPE 4H AND 6H-SIC HIGH-VOLTAGE SCHOTTKY-BARRIER DIODES, IEEE electron device letters, 19(3), 1998, pp. 71-73
Authors:
THAPAR N
BALIGA BJ
Citation: N. Thapar et Bj. Baliga, INFLUENCE OF THE COLLECTOR RESISTANCE ON THE PERFORMANCE OF ACCUMULATION CHANNEL DRIVEN BIPOLAR-TRANSISTOR, Solid-state electronics, 42(9), 1998, pp. 1697-1703
Authors:
THAPAR N
BALIGA BJ
Citation: N. Thapar et Bj. Baliga, AN EXPERIMENTAL EVALUATION OF THE ON-STATE PERFORMANCE OF TRENCH IGBTDESIGNS, Solid-state electronics, 42(5), 1998, pp. 771-776
Authors:
MEHROTRA M
BALIGA BJ
Citation: M. Mehrotra et Bj. Baliga, REVERSE BLOCKING LATERAL MOS-GATED SWITCHES FOR AC POWER-CONTROL APPLICATIONS, Solid-state electronics, 42(4), 1998, pp. 573-579
Authors:
YAMAZAKI T
BALIGA BJ
Citation: T. Yamazaki et Bj. Baliga, ANALYSIS AND SUPPRESSION OF LATCH-UP DURING IGBT MODE OF DG-BRT OPERATION, Solid-state electronics, 42(3), 1998, pp. 393-399
Authors:
THAPAR N
BALIGA BJ
Citation: N. Thapar et Bj. Baliga, ANALYTICAL MODEL FOR THE THRESHOLD VOLTAGE OF ACCUMULATION CHANNEL MOS-GATE DEVICES, Solid-state electronics, 42(11), 1998, pp. 1975-1979
Authors:
NAGAPUDI V
SUNKAVALLI R
BALIGA BJ
Citation: V. Nagapudi et al., EFFECT OF COLLECTOR STRUCTURE ON THE FBSOA OF THE DIELECTRICALLY-ISOLATED LIGBT, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1155-1161
Authors:
SAWANT S
BALIGA BJ
Citation: S. Sawant et Bj. Baliga, IMPROVED DC-EST STRUCTURE WITH DIODE DIVERTOR, Electronics Letters, 34(13), 1998, pp. 1358-1360
Authors:
RAGHUNATHAN R
BALIGA BJ
Citation: R. Raghunathan et Bj. Baliga, ROLE OF DEFECTS IN PRODUCING NEGATIVE TEMPERATURE-DEPENDENCE OF BREAKDOWN VOLTAGE IN SIC, Applied physics letters, 72(24), 1998, pp. 3196-3198
Authors:
THAPAR N
BALIGA BJ
Citation: N. Thapar et Bj. Baliga, THE ACCUMULATION CHANNEL DRIVEN BIPOLAR-TRANSISTOR (ACBT), IEEE electron device letters, 18(5), 1997, pp. 178-180
Authors:
SHENOY PM
BALIGA BJ
Citation: Pm. Shenoy et Bj. Baliga, THE PLANAR 6H-SIC ACCUFET - A NEW HIGH-VOLTAGE POWER MOSFET STRUCTURE, IEEE electron device letters, 18(12), 1997, pp. 589-591
Authors:
ALOK D
MAKESHWAR K
BALIGA BJ
Citation: D. Alok et al., RESIDUAL DAMAGE EFFECTS ON GATE CONTACTS FORMED ON SIC SURFACES ETCHED BY USING THE AMORPHIZATION TECHNIQUE, Journal of electronic materials, 26(3), 1997, pp. 108-112
Authors:
ALOK D
BALIGA BJ
Citation: D. Alok et Bj. Baliga, A SILICON-CARBIDE LOGOS PROCESS USING ENHANCED THERMAL-OXIDATION BY ARGON IMPLANTATION, Journal of electronic materials, 26(3), 1997, pp. 134-136
Authors:
SRIDHAR S
BALIGA BJ
Citation: S. Sridhar et Bj. Baliga, OUTPUT CHARACTERISTICS OF THE DUAL-CHANNEL EST, Solid-state electronics, 41(8), 1997, pp. 1133-1138
Authors:
SUNKAVALLI R
BALIGA BJ
Citation: R. Sunkavalli et Bj. Baliga, ANALYSIS OF ON-STATE CARRIER DISTRIBUTION IN THE DI-LIGBT, Solid-state electronics, 41(5), 1997, pp. 733-738
Authors:
SRIDHAR S
BALIGA BJ
Citation: S. Sridhar et Bj. Baliga, CURRENT SATURATION MECHANISM AND FBOSA OF THE SIMEST, Solid-state electronics, 41(4), 1997, pp. 561-566
Authors:
THAPAR N
BALIGA BJ
Citation: N. Thapar et Bj. Baliga, INFLUENCE OF THE TRENCH CORNER DESIGN ON EDGE TERMINATION OF UMOS POWER DEVICES, Solid-state electronics, 41(12), 1997, pp. 1929-1936
Authors:
SUNKAVALLI R
BALIGA BJ
Citation: R. Sunkavalli et Bj. Baliga, COMPARISON OF HIGH-SPEED DI-LIGBT STRUCTURES, Solid-state electronics, 41(12), 1997, pp. 1953-1956
Authors:
ALOK D
BALIGA BJ
Citation: D. Alok et Bj. Baliga, SIC DEVICE EDGE TERMINATION USING FINITE AREA ARGON IMPLANTATION, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 1013-1017
Authors:
SUNKAVALLI R
BALIGA BJ
TAMBA A
Citation: R. Sunkavalli et al., DIELECTRICALLY ISOLATED LATERAL MERGED PIN SCHOTTKY (LMPS) DIODES, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2011-2016
Authors:
SRIDHAR S
BALIGA BJ
Citation: S. Sridhar et Bj. Baliga, SIMFCT - A MOS-GATED FCT WITH HIGH VOLTAGE-CURRENT SATURATION, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2017-2021
Authors:
SHENOY PM
BALIGA BJ
Citation: Pm. Shenoy et Bj. Baliga, HIGH-VOLTAGE P+ POLYSILICON N- 6H-SIC HETEROJUNCTION DIODES/, Electronics Letters, 33(12), 1997, pp. 1086-1087
Authors:
ALOK D
BALIGA BJ
Citation: D. Alok et Bj. Baliga, KINETICS OF ENHANCED THERMAL-OXIDATION OF SILICON-CARBIDE USING AMORPHIZATION BY ION-IMPLANTATION, Journal of the Electrochemical Society, 144(3), 1997, pp. 1135-1137