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Results: 51-69/69
Authors:
NANDAKUMAR M
BALIGA BJ
Citation: M. Nandakumar et Bj. Baliga, MODELING THE TURN-OFF CHARACTERISTICS OF THE BASE RESISTANCE CONTROLLED THYRISTOR (BRT), Solid-state electronics, 38(3), 1995, pp. 703-713
Authors:
SINGH R
BALIGA BJ
Citation: R. Singh et Bj. Baliga, CRYOGENIC OPERATION OF ASYMMETRIC FIELD CONTROLLED THYRISTORS, Solid-state electronics, 38(12), 1995, pp. 2063-2067
Authors:
IWAMURO N
SHEKAR MS
BALIGA BJ
Citation: N. Iwamuro et al., FORWARD-BIASED SAFE OPERATING AREA OF EMITTER SWITCHED THYRISTORS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 334-339
Authors:
BALIGA BJ
Citation: Bj. Baliga, POWER ICS IN THE SADDLE, IEEE spectrum, 32(7), 1995, pp. 34
Authors:
SRIDHAR S
BALIGA BJ
Citation: S. Sridhar et Bj. Baliga, DUAL-CHANNEL EST BRT - A NEW HIGH-VOLTAGE MOS-GATED THYRISTOR STRUCTURE/, Electronics Letters, 31(6), 1995, pp. 494-496
Authors:
SRIDHAR S
BALIGA BJ
Citation: S. Sridhar et Bj. Baliga, THE SIMEST - AN EST STRUCTURE WITHOUT PARASITIC THYRISTOR ACHIEVED USING SIMOX TECHNOLOGY, Electronics Letters, 31(23), 1995, pp. 2048-2050
Authors:
BALIGA BJ
KURLAGUNDA R
Citation: Bj. Baliga et R. Kurlagunda, FLOATING BASE THYRISTOR, Electronics Letters, 31(18), 1995, pp. 1613-1615
Authors:
ALOK D
BALIGA BJ
MCLARTY PK
Citation: D. Alok et al., A SIMPLE EDGE TERMINATION FOR SILICON-CARBIDE DEVICES WITH NEARLY IDEAL BREAKDOWN VOLTAGE, IEEE electron device letters, 15(10), 1994, pp. 394-395
Authors:
ALOK D
BALIGA BJ
MCLARTY PK
Citation: D. Alok et al., THERMAL-OXIDATION OF GH-SILICON CARBIDE AT ENHANCED GROWTH-RATES, IEEE electron device letters, 15(10), 1994, pp. 424-426
Authors:
SHEKAR MS
BALIGA BJ
Citation: Ms. Shekar et Bj. Baliga, MODELING THE ON-STATE CHARACTERISTICS OF THE EMITTER SWITCHED THYRISTOR, Solid-state electronics, 37(7), 1994, pp. 1403-1412
Authors:
SINGH R
BALIGA BJ
Citation: R. Singh et Bj. Baliga, CRYOGENIC OPERATION OF P-I-N POWER RECTIFIERS, Solid-state electronics, 37(11), 1994, pp. 1833-1839
Authors:
MEHROTRA M
BALIGA BJ
Citation: M. Mehrotra et Bj. Baliga, LOW FORWARD DROP JBS RECTIFIERS FABRICATED USING SUBMICRON TECHNOLOGY, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1655-1660
Authors:
SYAU TY
VENKATRAMAN P
BALIGA BJ
Citation: Ty. Syau et al., COMPARISON OF ULTRALOW SPECIFIC ON-RESISTANCE UMOSFET STRUCTURES - THE ACCUFET, EXTFET, INVFET, AND CONVENTIONAL UMOSFETS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 800-808
Authors:
ALOK D
MCLARTY PK
BALIGA BJ
Citation: D. Alok et al., ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE, Applied physics letters, 65(17), 1994, pp. 2177-2178
Authors:
ALOK D
MCLARTY PK
BALIGA BJ
Citation: D. Alok et al., ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN ON N-TYPE 6H-SILICON CARBIDE, Applied physics letters, 64(21), 1994, pp. 2845-2846
Authors:
SHEKAR MS
NANDAKUMAR M
BALIGA BJ
Citation: Ms. Shekar et al., AN EMITTER SWITCHED THYRISTOR WITH BASE RESISTANCE CONTROL, IEEE electron device letters, 14(6), 1993, pp. 280-282
Authors:
TU SHL
BALIGA BJ
Citation: Shl. Tu et Bj. Baliga, CONTROLLING THE CHARACTERISTICS OF THE MPS RECTIFIER BY VARIATION OF AREA OF SCHOTTKY REGION, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1307-1315
Authors:
SYAU T
BALIGA BJ
Citation: T. Syau et Bj. Baliga, MOBILITY STUDY ON RIE ETCHED SILICON SURFACES USING SF6 O-2 GAS ETCHANTS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1997-2005
Authors:
MEHROTRA M
BALIGA BJ
Citation: M. Mehrotra et Bj. Baliga, VERY-LOW FORWARD DROP JBS RECTIFIERS FABRICATED USING SUBMICRON TECHNOLOGY, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2131-2132