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Results: 1-12 |
Results: 12
OPTICAL AND STRUCTURAL QUALITY OF GAAS EPILAYERS FROM GALLIUM, BISMUTH MIXED-SOLVENTS BY LIQUID-PHASE EPITAXY
Authors: SARAVANAN S JEGANATHAN K AROKIARAJ J BASKAR K RAMASAMY P JIMBO T SOGA T UMENO M
Citation: S. Saravanan et al., OPTICAL AND STRUCTURAL QUALITY OF GAAS EPILAYERS FROM GALLIUM, BISMUTH MIXED-SOLVENTS BY LIQUID-PHASE EPITAXY, JPN J A P 1, 37(5A), 1998, pp. 2598-2601
HETEROEPITAXIAL TECHNOLOGIES ON SI FOR HIGH-EFFICIENCY SOLAR-CELLS
Authors: UMENO M SOGA T BASKAR K JIMBO T
Citation: M. Umeno et al., HETEROEPITAXIAL TECHNOLOGIES ON SI FOR HIGH-EFFICIENCY SOLAR-CELLS, Solar energy materials and solar cells, 50(1-4), 1998, pp. 203-212
ON THE BISMUTH COMPOSITION DEPENDENT CONCENTRATION OF ARSENIC ATOMS DURING LPE GROWTH OF GAAS-LAYERS FROM GA-AS-BI SOLUTION
Authors: JEGANATHAN K SARAVANAN S BASKAR K KUMAR J
Citation: K. Jeganathan et al., ON THE BISMUTH COMPOSITION DEPENDENT CONCENTRATION OF ARSENIC ATOMS DURING LPE GROWTH OF GAAS-LAYERS FROM GA-AS-BI SOLUTION, Physica status solidi. a, Applied research, 165(2), 1998, pp. 437-443
CRYSTAL-GROWTH OF HIGH-QUALITY HYBRID GAAS HETEROEPITAXIAL LAYERS ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND LIQUID-PHASE EPITAXY
Authors: SARAVANAN S JEGANATHAN K BASKAR K JIMBO T SOGA T UMENO M
Citation: S. Saravanan et al., CRYSTAL-GROWTH OF HIGH-QUALITY HYBRID GAAS HETEROEPITAXIAL LAYERS ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND LIQUID-PHASE EPITAXY, Journal of crystal growth, 192(1-2), 1998, pp. 23-27
HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN FROM GA-AS-BI SOLUTIONS BY LIQUID-PHASE EPITAXY
Authors: SARAVANAN S JEGANATHAN K BASKAR K KUMAR J SUBRAMANIAN C SOGA T JIMBO T ARORA BM UMENO M
Citation: S. Saravanan et al., HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN FROM GA-AS-BI SOLUTIONS BY LIQUID-PHASE EPITAXY, JPN J A P 1, 36(6A), 1997, pp. 3385-3388
INVESTIGATIONS ON THE CONCENTRATION PROFILES OF ARSENIC ATOMS DURING PHASE EPITAXIAL-GROWTH OF GAAS FROM GA-AS-BI SOLUTION
Authors: JEGANATHAN K SARAVANAN S BASKAR K KUMAR J
Citation: K. Jeganathan et al., INVESTIGATIONS ON THE CONCENTRATION PROFILES OF ARSENIC ATOMS DURING PHASE EPITAXIAL-GROWTH OF GAAS FROM GA-AS-BI SOLUTION, Materials chemistry and physics, 49(2), 1997, pp. 141-145
EFFECT OF THERMAL CYCLIC GROWTH ON DEEP LEVELS IN ALGAAS SI HETEROSTRUCTURES GROWN BY MOCVD/
Authors: BASKAR K SOGA T SHAO CL EGAWA T JIMBO T UMENO M
Citation: K. Baskar et al., EFFECT OF THERMAL CYCLIC GROWTH ON DEEP LEVELS IN ALGAAS SI HETEROSTRUCTURES GROWN BY MOCVD/, Applied surface science, 114, 1997, pp. 573-578
MOCVD GROWTH OF HIGH-EFFICIENCY CURRENT-MATCHED ALGAAS SI TANDEM SOLAR-CELL/
Authors: SOGA T BASKAR K KATO T JIMBO T UMENO M
Citation: T. Soga et al., MOCVD GROWTH OF HIGH-EFFICIENCY CURRENT-MATCHED ALGAAS SI TANDEM SOLAR-CELL/, Journal of crystal growth, 174(1-4), 1997, pp. 579-584
MOCVD GROWTH OF HIGH-QUALITY ALGAAS ON SI SUBSTRATES FOR HIGH-EFFICIENCY SOLAR-CELLS
Authors: SOGA T KATO T BASKAR K SHAO CL JIMBO T UMENO M
Citation: T. Soga et al., MOCVD GROWTH OF HIGH-QUALITY ALGAAS ON SI SUBSTRATES FOR HIGH-EFFICIENCY SOLAR-CELLS, Journal of crystal growth, 170(1-4), 1997, pp. 447-450
DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF UNDOPED AND SN-DOPED ALXGA1-XAS EPILAYERS GROWN BY LIQUID-PHASE EPITAXY
Authors: JOTHILINGAM R SARAVANAN S BASKAR K
Citation: R. Jothilingam et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF UNDOPED AND SN-DOPED ALXGA1-XAS EPILAYERS GROWN BY LIQUID-PHASE EPITAXY, Journal of materials science letters, 15(13), 1996, pp. 1132-1133
STUDIES ON ICE NUCLEATING BEHAVIOR OF AGI-AGBR-CUBR SYSTEM
Authors: RADHAKRISHNAN T BASKAR K SUBRAMANIAN C RAMASAMY P RADHAKRISHNAN KR
Citation: T. Radhakrishnan et al., STUDIES ON ICE NUCLEATING BEHAVIOR OF AGI-AGBR-CUBR SYSTEM, Materials research bulletin, 31(3), 1996, pp. 301-306
GROWTH OF HIGH-QUALITY AL0.22GA0.78AS LAYERS ON SI SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: BASKAR K SOGA T JIMBO T UMENO M
Citation: K. Baskar et al., GROWTH OF HIGH-QUALITY AL0.22GA0.78AS LAYERS ON SI SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 80(7), 1996, pp. 4112-4115
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