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Results: 26-38/38
Authors:
WEISHART H
BAUSER E
Citation: H. Weishart et E. Bauser, GROWTH-CONDITIONS FOR IMPROVING THE QUALITY OF SEMICONDUCTOR SINGLE-CRYSTAL MATERIAL, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 33-36
Authors:
BANHART F
NAGEL N
PHILLIPP F
CZECH E
SILIER I
BAUSER E
Citation: F. Banhart et al., THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .2. STRAINS AND DEFECT NUCLEATION STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY, Applied physics. A, Solids and surfaces, 57(5), 1993, pp. 441-448
Authors:
NAGEL N
BANHART F
CZECH E
SILIER I
PHILLIPP F
BAUSER E
Citation: N. Nagel et al., THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .1. GROWTH AND COALESCENCE OF DEFECT-FREE SILICON LAYERS, Applied physics. A, Solids and surfaces, 57(3), 1993, pp. 249-254
Authors:
SUBRAMANIAN S
ANAND S
ARORA BM
LU YC
BAUSER E
Citation: S. Subramanian et al., CHARGE-STATE OF THE DX CENTER IN ALUMINUM GALLIUM-ARSENIDE FROM PHOTO-HALL MEASUREMENTS, Physical review. B, Condensed matter, 48(12), 1993, pp. 8757-8760
Authors:
MAREK T
STRUNK HP
WEISHART H
BAUSER E
Citation: T. Marek et al., MICROTOPOLOGY OF TERRACE RISERS AND TREADS ON SOLUTION-GROWN GAAS(001) VICINAL SURFACES, Journal of crystal growth, 134(1-2), 1993, pp. 14-18
Authors:
WEISHART H
DANILEWSKY AN
BENZ KW
BAUSER E
Citation: H. Weishart et al., MORPHOLOGICAL STABILITY DURING GAAS SOLUTION GROWTH - LIQUID-PHASE EPITAXY VERSUS THE TRAVELING HEATER METHOD, Journal of crystal growth, 131(1-2), 1993, pp. 17-31
Authors:
MOHLING W
WEISHART H
BAUSER E
Citation: W. Mohling et al., NATURE OF DISLOCATIONS PROMOTING GROWTH IN LIQUID-PHASE EPITAXY OF GALLIUM-ARSENIDE, Journal of crystal growth, 130(3-4), 1993, pp. 466-474
Authors:
KONUMA M
BAUSER E
Citation: M. Konuma et E. Bauser, WATER-VAPOR CONTROLLING SELECTIVE REACTIVE ION ETCHING OF SIO2 SI IN NF3 PLASMA/, Journal of applied physics, 74(3), 1993, pp. 1575-1578
Authors:
KONUMA M
BAUSER E
Citation: M. Konuma et E. Bauser, MASS AND ENERGY ANALYSIS OF GASEOUS SPECIES IN NF3 PLASMA DURING SILICON REACTIVE ION ETCHING, Journal of applied physics, 74(1), 1993, pp. 62-67
Authors:
KONUMA M
CZECH E
SILIER I
BAUSER E
Citation: M. Konuma et al., LIQUID-PHASE EPITAXY CENTRIFUGE FOR 100 MM DIAMETER SI SUBSTRATES, Applied physics letters, 63(2), 1993, pp. 205-207
Authors:
WERNER JH
KOLODINSKI S
RAU U
ARCH JK
BAUSER E
Citation: Jh. Werner et al., SILICON SOLAR-CELL OF 16.8 MU-M THICKNESS AND 14.7-PERCENT EFFICIENCY, Applied physics letters, 62(23), 1993, pp. 2998-3000
Authors:
LI MF
YU PY
BAUSER E
HANSEN WL
HALLER EE
Citation: Mf. Li et al., DEEP LEVEL TRANSIENT SPECTROSCOPY OF DX CENTERS IN AL0.38GA0.62AS - TE UNDER UNIAXIAL-STRESS, Semiconductor science and technology, 6(8), 1991, pp. 825-829
Authors:
WILKENING W
KAUFMAN U
BAUSER E
Citation: W. Wilkening et al., ELECTRON-PARAMAGNETIC RESONANCE OF THE SHALLOW SN DONOR IN GAAS AL0.68GA0.32AS-SN HETEROSTRUCTURES/, Semiconductor science and technology, 6(10B), 1991, pp. 84-87