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Results:
1-8
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Results: 8
Authors:
BAUZA D
Citation: D. Bauza, NEAR-INTERFACE OXIDE TRAP CAPTURE KINETICS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS - MODELING AND MEASUREMENTS, Journal of applied physics, 84(11), 1998, pp. 6178-6186
Authors:
MANEGLIA Y
BAUZA D
MORFOULI Y
GHIBAUDO G
Citation: Y. Maneglia et al., ELECTRICAL-PROPERTIES OF ULTRATHIN RTCVD OXINITRIDE FILMS IN N-CHANNEL AND P-CHANNEL MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 153-155
Authors:
BAUZA D
MANEGLIA Y
Citation: D. Bauza et Y. Maneglia, IN-DEPTH EXPLORATION OF SI-SIO2 INTERFACE TRAPS IN MOS-TRANSISTORS USING THE CHARGE-PUMPING TECHNIQUE, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2262-2266
Authors:
BAUZA D
GHIBAUDO G
Citation: D. Bauza et G. Ghibaudo, ANALYTICAL STUDY OF THE CONTRIBUTION OF FAST AND SLOW OXIDE TRAPS TO THE CHARGE-PUMPING CURRENT IN MOS STRUCTURES, Solid-state electronics, 39(4), 1996, pp. 563-570
Authors:
MANEGLIA Y
BAUZA D
Citation: Y. Maneglia et D. Bauza, EXTRACTION OF SLOW OXIDE TRAP CONCENTRATION PROFILES IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS USING THE CHARGE-PUMPING METHOD, Journal of applied physics, 79(8), 1996, pp. 4187-4192
Authors:
BAUZA D
GHIBAUDO G
Citation: D. Bauza et G. Ghibaudo, RESPECTIVE CONTRIBUTIONS OF THE FAST AND SLOW TRAPS TO CHARGE-PUMPINGMEASUREMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 325-328
Authors:
BAUZA D
Citation: D. Bauza, DETECTION OF SLOW TRAPS IN THE OXIDE OF MOS-TRANSISTORS BY A NEW CURRENT DLTS TECHNIQUE, Electronics Letters, 30(6), 1994, pp. 484-485
Authors:
BAUZA D
MALLARDEAU C
PANANAKAKIS G
Citation: D. Bauza et al., STUDY OF REACTIVE ION ETCHING PROCESSES FOR SCHOTTKY-BARRIER DIODE FORMATIONS, Physica status solidi. a, Applied research, 137(1), 1993, pp. 115-124
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1-8
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