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Results: 1-12 |
Results: 12
MULTIWAFER MOVPE TECHNOLOGY FOR LOW-DIMENSIONAL GA-AL-IN-N STRUCTURES
Authors: BECCARD R NIEBUHR R WACHTENDORF B SCHMITZ D JURGENSEN H
Citation: R. Beccard et al., MULTIWAFER MOVPE TECHNOLOGY FOR LOW-DIMENSIONAL GA-AL-IN-N STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 39-43
OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: YABLONSKII GP GURSKII AL LUTSENKO EV MARKO IP SCHINELLER B GUTTZEIT A SCHON O HEUKEN M HEIME K BECCARD R SCHMITZ D JUERGENSEN H
Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228
COMPARISON OF HYDROGEN AND NITROGEN AS CARRIER GAS FOR MOVPE GROWTH OF GAN
Authors: SCHON O SCHINELLER B HEUKEN M BECCARD R
Citation: O. Schon et al., COMPARISON OF HYDROGEN AND NITROGEN AS CARRIER GAS FOR MOVPE GROWTH OF GAN, Journal of crystal growth, 190, 1998, pp. 335-339
MOVPE GROWTH OF HIGH-QUALITY III-NITRIDE MATERIAL FOR LIGHT-EMITTING DEVICE APPLICATIONS IN A MULTIWAFER SYSTEM
Authors: VONEICHELSTREIBER C SCHON O BECCARD R SCHMITZ D HEUKEN M JURGENSEN H
Citation: C. Voneichelstreiber et al., MOVPE GROWTH OF HIGH-QUALITY III-NITRIDE MATERIAL FOR LIGHT-EMITTING DEVICE APPLICATIONS IN A MULTIWAFER SYSTEM, Journal of crystal growth, 190, 1998, pp. 344-348
COMPENSATION EFFECTS IN MG-DOPED GAN EPILAYERS
Authors: ECKEY L VONGFUG U HOLST J HOFFMANN A SCHINELLER B HEIME K HEUKEN M SCHON O BECCARD R
Citation: L. Eckey et al., COMPENSATION EFFECTS IN MG-DOPED GAN EPILAYERS, Journal of crystal growth, 190, 1998, pp. 523-527
LIGHT-EMITTING-DIODES AS A MONITOR TO STUDY P-TYPE DOPING OF GAN-BASED HETEROSTRUCTURES GROWN BY MOVPE
Authors: SCHINELLER B GUTTZEIT A VERTOMMEN F SCHON O HEUKEN M HEIME K BECCARD R
Citation: B. Schineller et al., LIGHT-EMITTING-DIODES AS A MONITOR TO STUDY P-TYPE DOPING OF GAN-BASED HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 190, 1998, pp. 798-802
PHOTOLUMINESCENCE AND RAMAN-STUDY OF COMPENSATION EFFECTS IN MG-DOPEDGAN EPILAYERS
Authors: ECKEY L VONGFUG U HOLST J HOFFMANN A KASCHNER A SIEGLE H THOMSEN C SCHINELLER B HEIME K HEUKEN M SCHON O BECCARD R
Citation: L. Eckey et al., PHOTOLUMINESCENCE AND RAMAN-STUDY OF COMPENSATION EFFECTS IN MG-DOPEDGAN EPILAYERS, Journal of applied physics, 84(10), 1998, pp. 5828-5830
SIC AND GROUP-III NITRIDE GROWTH IN MOVPE PRODUCTION REACTORS
Authors: BECCARD R SCHMITZ D WOELK EG STRAUCH G JURGENSEN H
Citation: R. Beccard et al., SIC AND GROUP-III NITRIDE GROWTH IN MOVPE PRODUCTION REACTORS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1301-1305
EFFICIENT AND UNIFORM PRODUCTION OF III-NITRIDE FILMS BY MULTIWAFER MOVPE
Authors: DESCHLER M BECCARD R WACHTENDORF B SCHMITZ D JUERGENSEN H
Citation: M. Deschler et al., EFFICIENT AND UNIFORM PRODUCTION OF III-NITRIDE FILMS BY MULTIWAFER MOVPE, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 1-7
AL-GA-IN-NITRIDE HETEROSTRUCTURES - MOVPE GROWTH IN PRODUCTION REACTORS AND CHARACTERIZATION
Authors: BECCARD R SCHOEN O WACHTENDORF B SCHMITZ D JUERGENSEN H WOELK E
Citation: R. Beccard et al., AL-GA-IN-NITRIDE HETEROSTRUCTURES - MOVPE GROWTH IN PRODUCTION REACTORS AND CHARACTERIZATION, Journal of electronic materials, 26(10), 1997, pp. 1123-1126
REPLACEMENT OF HYDRIDES BY TBAS AND TBP FOR THE GROWTH OF VARIOUS III-V MATERIALS IN PRODUCTION SCALE MOVPE REACTORS
Authors: BECCARD R LENGELING G SCHMITZ D GIGASE Y JURGENSEN H
Citation: R. Beccard et al., REPLACEMENT OF HYDRIDES BY TBAS AND TBP FOR THE GROWTH OF VARIOUS III-V MATERIALS IN PRODUCTION SCALE MOVPE REACTORS, Journal of crystal growth, 170(1-4), 1997, pp. 97-102
LOW-TEMPERATURE GROWTH AND NITROGEN DOPING OF ZNSE USING DIETHYLZINC AND DITERTIARYBUTYLSELENIDE IN A PLASMA-STIMULATED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM
Authors: TAUDT W WACHTENDORF B BECCARD R WAHID A HEUKEN M GURSKII AL VAKARELSKA K
Citation: W. Taudt et al., LOW-TEMPERATURE GROWTH AND NITROGEN DOPING OF ZNSE USING DIETHYLZINC AND DITERTIARYBUTYLSELENIDE IN A PLASMA-STIMULATED LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY SYSTEM, Journal of crystal growth, 145(1-4), 1994, pp. 582-588
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