ACNP - Italian Periodicals Catalogue

AAAAAA

ITA
ENG

Results: 1-9 |

Results: 9

CHARACTERIZATION OF MOVPE GROWN INPSB INAS HETEROSTRUCTURES/

Authors: DREWS D SCHNEIDER A WERNINGHAUS T BEHRES A HEUKEN M HEIME K ZAHN DRT

Citation: D. Drews et al., CHARACTERIZATION OF MOVPE GROWN INPSB INAS HETEROSTRUCTURES/, Applied surface science, 123, 1998, pp. 746-750

CALCULATION OF LATERAL DISTRIBUTION OF LATTICE-CONSTANT FOR HORIZONTAL MOVPE GROWN QUATERNARY ALLOYS (VOL 193, PG 50, 1998)

Authors: XU J CHENG XJ BEHRES A HEIME K

Citation: J. Xu et al., CALCULATION OF LATERAL DISTRIBUTION OF LATTICE-CONSTANT FOR HORIZONTAL MOVPE GROWN QUATERNARY ALLOYS (VOL 193, PG 50, 1998), Journal of crystal growth, 193(4), 1998, pp. 738-738

CALCULATION OF LATERAL DISTRIBUTION OF LATTICE-CONSTANT FOR HORIZONTAL MOVPE GROWN QUATERNARY ALLOYS

Authors: XU J CHENG XJ BEHRES A HEIME K

Citation: J. Xu et al., CALCULATION OF LATERAL DISTRIBUTION OF LATTICE-CONSTANT FOR HORIZONTAL MOVPE GROWN QUATERNARY ALLOYS, Journal of crystal growth, 193(1-2), 1998, pp. 50-54

AL(AS,SB) HETEROBARRIERS ON INAS - GROWTH, STRUCTURAL-PROPERTIES AND ELECTRICAL-TRANSPORT

Authors: BLANK HR MATHIS S HALL E BHARGAVA S BEHRES A HEUKEN M KROEMER H NARAYANAMURTI V

Citation: Hr. Blank et al., AL(AS,SB) HETEROBARRIERS ON INAS - GROWTH, STRUCTURAL-PROPERTIES AND ELECTRICAL-TRANSPORT, Journal of crystal growth, 187(1), 1998, pp. 18-28

METAMORPHIC INGAAS INALAS QUANTUM-WELL STRUCTURES GROWN ON GAAS SUBSTRATES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATIONS/

Authors: BEHET M VANDERZANDEN K BORGHS G BEHRES A

Citation: M. Behet et al., METAMORPHIC INGAAS INALAS QUANTUM-WELL STRUCTURES GROWN ON GAAS SUBSTRATES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATIONS/, Applied physics letters, 73(19), 1998, pp. 2760-2762

MOVPE GROWTH OF INPSB INAS HETEROSTRUCTURES FOR MIDINFRARED EMITTERS/

Authors: HEUKEN M EICHELSTREIBER CV BEHRES A SCHINELLER B HEIME K MENDORF C BROCKT G LAKNER H

Citation: M. Heuken et al., MOVPE GROWTH OF INPSB INAS HETEROSTRUCTURES FOR MIDINFRARED EMITTERS/, Journal of electronic materials, 26(10), 1997, pp. 1221-1224

INP GROWTH ON ION-IMPLANTED INP SUBSTRATE - A NEW METHOD TO ACHIEVE SELECTIVE-AREA MOVPE

Authors: BEHRES A WERNER H KOHL A HEIME K

Citation: A. Behres et al., INP GROWTH ON ION-IMPLANTED INP SUBSTRATE - A NEW METHOD TO ACHIEVE SELECTIVE-AREA MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 655-660

CHARACTERIZATION OF MOVPE GROWN INGAASP SUPERLATTICES FOR MODULATORS BY ELECTRON-DIFFRACTION, X-RAY-DIFFRACTION AND Z-CONTRAST IMAGING

Authors: LAKNER H UNGERECHTS S BEHRES A KOHL A OPITZ B HEIME K WOITOK J

Citation: H. Lakner et al., CHARACTERIZATION OF MOVPE GROWN INGAASP SUPERLATTICES FOR MODULATORS BY ELECTRON-DIFFRACTION, X-RAY-DIFFRACTION AND Z-CONTRAST IMAGING, Journal of crystal growth, 170(1-4), 1997, pp. 732-737

HIGH-PERFORMANCE AL-FREE IN0.75GA0.25P INP/INXGA1-XAS/INP (X-GREATER-THAN-OR-EQUAL-TO-53-PERCENT) BACKSIDE-DOPED SPLIT-CHANNEL HFETS WITH 0.25-MU-M T-GATES/

Authors: KUSTERS AM PULS C WULLER R BEHRES A KOHL A SOMMER V HEIME K

Citation: Am. Kusters et al., HIGH-PERFORMANCE AL-FREE IN0.75GA0.25P INP/INXGA1-XAS/INP (X-GREATER-THAN-OR-EQUAL-TO-53-PERCENT) BACKSIDE-DOPED SPLIT-CHANNEL HFETS WITH 0.25-MU-M T-GATES/, Electronics Letters, 31(5), 1995, pp. 409-411

Risultati: 1-9 |