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Authors: BERISHEV I KIM E BENSAOULA A

Citation: I. Berishev et al., HIGH GROWTH-RATE GAN FILMS USING A MODIFIED ELECTRON-CYCLOTRON-RESONANCE PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2791-2793

Authors: BERISHEV I BENSAOULA A RUSAKOVA I KARABUTOV A UGAROV M AGEEV VP

Citation: I. Berishev et al., FIELD-EMISSION PROPERTIES OF GAN FILMS ON SI(111), Applied physics letters, 73(13), 1998, pp. 1808-1810

Authors: KIM E BERISHEV I BENSAOULA A LEE S PERRY SS WATERS K SCHULTZ JA

Citation: E. Kim et al., NUCLEATION AND GROWTH OF CHEMICAL BEAM EPITAXY GALLIUM NITRIDE THIN-FILMS, Applied physics letters, 71(21), 1997, pp. 3072-3074