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Results: 1-6 |
Results: 6

Authors: CALLARD S GAGNAIRE A BESLAND MP JOSEPH J
Citation: S. Callard et al., ADAPTED WAVELENGTH METHODS FOR IN-SITU ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 479-483

Authors: LAMBRINOS MF BESLAND MP GAGNAIRE A LOUIS P CALLARD S JOSEPH J
Citation: Mf. Lambrinos et al., IN-SITU PHOTOLUMINESCENCE CONTROL DURING FABRICATION OF SIO2 INP STRUCTURES/, Journal of the Electrochemical Society, 144(6), 1997, pp. 2086-2095

Authors: BESLAND MP JOURBA S LAMBRINOS M LOUIS P VIKTOROVITCH P HOLLINGER G
Citation: Mp. Besland et al., OPTIMIZED SIO2 INP STRUCTURES PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA/, Journal of applied physics, 80(5), 1996, pp. 3100-3109

Authors: VIKTOROVITCH P LOUIS P BESLAND MP CHOVET A
Citation: P. Viktorovitch et al., ELECTRICAL CHARACTERIZATION OF METAL-OXIDE INP TUNNEL-DIODES BASED ONCURRENT-VOLTAGE, ADMITTANCE AND LOW-FREQUENCY NOISE MEASUREMENTS, Solid-state electronics, 38(5), 1995, pp. 1035-1043

Authors: HOFSTRA PG THOMPSON DA ROBINSON BJ BESLAND MP GENDRY M REGRENY P HOLLINGER G
Citation: Pg. Hofstra et al., DESORPTION OF ULTRAVIOLET-OZONE OXIDES FROM INP UNDER PHOSPHORUS AND ARSENIC OVERPRESSURES, Journal of applied physics, 77(10), 1995, pp. 5167-5172

Authors: LOUIS P BESLAND MP ROBACH Y JOSEPH J
Citation: P. Louis et al., CORRELATIONS BETWEEN THE ELECTRICAL CHARACTERISTICS OF METAL-OXIDE-INP TUNNEL-DIODES AND THE NATURE OF THIN INTERFACIAL OXIDES, Journal of the Electrochemical Society, 142(4), 1995, pp. 1343-1348
Risultati: 1-6 |